Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications

In this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. As the wavelength of light illuminating the nanowire channel region became shorter, a negative shift of threshold voltage, degradation of s...

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Main Authors: Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju
Format: Article
Language:English
Published: AIP Publishing LLC 2013-01-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4789405
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author Sumi Lee
Seongmin Kim
David B. Janes
M. Meyyappan
Sanghyun Ju
author_facet Sumi Lee
Seongmin Kim
David B. Janes
M. Meyyappan
Sanghyun Ju
author_sort Sumi Lee
collection DOAJ
description In this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. As the wavelength of light illuminating the nanowire channel region became shorter, a negative shift of threshold voltage, degradation of subthreshold slope, and increase of on-current were observed. This phenomenon can be explained in terms of photo-induced holes, creating interfacial traps between the gate dielectric and nanowire channel or reacting with oxygen ions on the surface of the nanowires. Thus, the attempt to minimize characteristic changes due to all RGB light sources was performed by employing ultraviolet–ozone treatment and passivation process. As a result, we could successfully fabricate oxide nanowire transistors providing high optical reliability which has broadened the possibilities for applying it to transparent and/or flexible pixel operation circuitry for displays with high optical reliability.
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spelling doaj.art-9bd2dda72742494491b845781d7e73832022-12-22T03:10:16ZengAIP Publishing LLCAIP Advances2158-32262013-01-013101211201211210.1063/1.4789405Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applicationsSumi LeeSeongmin KimDavid B. JanesM. MeyyappanSanghyun JuIn this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. As the wavelength of light illuminating the nanowire channel region became shorter, a negative shift of threshold voltage, degradation of subthreshold slope, and increase of on-current were observed. This phenomenon can be explained in terms of photo-induced holes, creating interfacial traps between the gate dielectric and nanowire channel or reacting with oxygen ions on the surface of the nanowires. Thus, the attempt to minimize characteristic changes due to all RGB light sources was performed by employing ultraviolet–ozone treatment and passivation process. As a result, we could successfully fabricate oxide nanowire transistors providing high optical reliability which has broadened the possibilities for applying it to transparent and/or flexible pixel operation circuitry for displays with high optical reliability.http://link.aip.org/link/doi/10.1063/1.4789405
spellingShingle Sumi Lee
Seongmin Kim
David B. Janes
M. Meyyappan
Sanghyun Ju
Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
AIP Advances
title Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
title_full Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
title_fullStr Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
title_full_unstemmed Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
title_short Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
title_sort red green blue light sensitivity of oxide nanowire transistors for transparent display applications
url http://link.aip.org/link/doi/10.1063/1.4789405
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