Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles

Abstract We investigate the photogalvanic effect in nitrogen-doped monolayer molybdenum disulfide (MoS2) under the perpendicular irradiation, using first-principles calculations combined with non-equilibrium Green function formalism. We provide a detailed analysis on the behavior of photoresponse ba...

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Main Authors: Wen-Ming Luo, Zhi-Gang Shao, Mou Yang
Format: Article
Language:English
Published: SpringerOpen 2019-12-01
Series:Nanoscale Research Letters
Subjects:
Online Access:https://doi.org/10.1186/s11671-019-3222-5
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author Wen-Ming Luo
Zhi-Gang Shao
Mou Yang
author_facet Wen-Ming Luo
Zhi-Gang Shao
Mou Yang
author_sort Wen-Ming Luo
collection DOAJ
description Abstract We investigate the photogalvanic effect in nitrogen-doped monolayer molybdenum disulfide (MoS2) under the perpendicular irradiation, using first-principles calculations combined with non-equilibrium Green function formalism. We provide a detailed analysis on the behavior of photoresponse based on the band structure and in particular the joint density of states. We thereby identify different mechanisms leading to the existence of zero points, where the photocurrent vanishes. In particular, while the zero point in the linear photovoltaic effect is due to forbidden transition, their appearance in the circular photovoltaic effect results from the identical intensity splitting of the valance band and the conduction band in the presence of Rashba and Dresslhaus spin-orbit coupling. Furthermore, our results reveal a strong circular photogalvanic effect of nitrogen-doped monolayer MoS2, which is two orders of magnitude larger than that induced by the linearly polarized light.
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spelling doaj.art-9bd57f531758480f8955c2f8437f465e2023-09-02T17:49:46ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-12-011411810.1186/s11671-019-3222-5Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First PrinciplesWen-Ming Luo0Zhi-Gang Shao1Mou Yang2Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, GPETR Center for Quantum Precision Measurement, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, SPTE, South China Normal UniversityGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, GPETR Center for Quantum Precision Measurement, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, SPTE, South China Normal UniversityGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, GPETR Center for Quantum Precision Measurement, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, SPTE, South China Normal UniversityAbstract We investigate the photogalvanic effect in nitrogen-doped monolayer molybdenum disulfide (MoS2) under the perpendicular irradiation, using first-principles calculations combined with non-equilibrium Green function formalism. We provide a detailed analysis on the behavior of photoresponse based on the band structure and in particular the joint density of states. We thereby identify different mechanisms leading to the existence of zero points, where the photocurrent vanishes. In particular, while the zero point in the linear photovoltaic effect is due to forbidden transition, their appearance in the circular photovoltaic effect results from the identical intensity splitting of the valance band and the conduction band in the presence of Rashba and Dresslhaus spin-orbit coupling. Furthermore, our results reveal a strong circular photogalvanic effect of nitrogen-doped monolayer MoS2, which is two orders of magnitude larger than that induced by the linearly polarized light.https://doi.org/10.1186/s11671-019-3222-5Photogalvanic effectN-doped monolayer MoS2Asymmetry of spatial inversionJoint density of states
spellingShingle Wen-Ming Luo
Zhi-Gang Shao
Mou Yang
Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
Nanoscale Research Letters
Photogalvanic effect
N-doped monolayer MoS2
Asymmetry of spatial inversion
Joint density of states
title Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
title_full Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
title_fullStr Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
title_full_unstemmed Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
title_short Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
title_sort photogalvanic effect in nitrogen doped monolayer mos2 from first principles
topic Photogalvanic effect
N-doped monolayer MoS2
Asymmetry of spatial inversion
Joint density of states
url https://doi.org/10.1186/s11671-019-3222-5
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AT zhigangshao photogalvaniceffectinnitrogendopedmonolayermos2fromfirstprinciples
AT mouyang photogalvaniceffectinnitrogendopedmonolayermos2fromfirstprinciples