Investigation of silicon carbide thin films properties at the open cosmos space
The problems of stability semiconductor device structures to open space conditions influence are studied. It is shown that complex investigation of electrophysical properties of semiconductor layers during the time of cosmic flight is necessary. Samples of device structures for investigation of open...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2017-04-01
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| Series: | Физика волновых процессов и радиотехнические системы |
| Subjects: | |
| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7076/6935 |
| _version_ | 1797382589046063104 |
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| author | Y.N. Gorelov A.V. Shcherbak L.V. Kurganskaya D.U. Golubeva |
| author_facet | Y.N. Gorelov A.V. Shcherbak L.V. Kurganskaya D.U. Golubeva |
| author_sort | Y.N. Gorelov |
| collection | DOAJ |
| description | The problems of stability semiconductor device structures to open space conditions influence are studied. It is shown that complex investigation of electrophysical properties of semiconductor layers during the time of cosmic flight is necessary. Samples of device structures for investigation of open space conditions influence on semiconductor layer resistivity, metal-semiconductor and insulator-semiconductor interfaces properties are proposed. Methods of measuring resistivity, Hall factor, current-voltage characteristics and volt capacitive characteristics of device structures samples are considered. Measurement circuits adapted for operation with automatic measurement systems are proposed. |
| first_indexed | 2024-03-08T21:08:42Z |
| format | Article |
| id | doaj.art-9c2171c4a7484f9d94388ec23eae5925 |
| institution | Directory Open Access Journal |
| issn | 1810-3189 2782-294X |
| language | English |
| last_indexed | 2024-03-08T21:08:42Z |
| publishDate | 2017-04-01 |
| publisher | Povolzhskiy State University of Telecommunications & Informatics |
| record_format | Article |
| series | Физика волновых процессов и радиотехнические системы |
| spelling | doaj.art-9c2171c4a7484f9d94388ec23eae59252023-12-22T10:31:39ZengPovolzhskiy State University of Telecommunications & InformaticsФизика волновых процессов и радиотехнические системы1810-31892782-294X2017-04-0120463716642Investigation of silicon carbide thin films properties at the open cosmos spaceY.N. Gorelov0A.V. Shcherbak1L.V. Kurganskaya2D.U. Golubeva3Самарский национальный исследовательский университет им. акад. С.П. КоролеваСамарский национальный исследовательский университет им. акад. С.П. КоролеваСамарский национальный исследовательский университет им. акад. С.П. КоролеваСамарский национальный исследовательский университет им. акад. С.П. КоролеваThe problems of stability semiconductor device structures to open space conditions influence are studied. It is shown that complex investigation of electrophysical properties of semiconductor layers during the time of cosmic flight is necessary. Samples of device structures for investigation of open space conditions influence on semiconductor layer resistivity, metal-semiconductor and insulator-semiconductor interfaces properties are proposed. Methods of measuring resistivity, Hall factor, current-voltage characteristics and volt capacitive characteristics of device structures samples are considered. Measurement circuits adapted for operation with automatic measurement systems are proposed.https://journals.ssau.ru/pwp/article/viewFile/7076/6935silicon carbidedevice structureelectrophysical propertiesspace experiment |
| spellingShingle | Y.N. Gorelov A.V. Shcherbak L.V. Kurganskaya D.U. Golubeva Investigation of silicon carbide thin films properties at the open cosmos space Физика волновых процессов и радиотехнические системы silicon carbide device structure electrophysical properties space experiment |
| title | Investigation of silicon carbide thin films properties at the open cosmos space |
| title_full | Investigation of silicon carbide thin films properties at the open cosmos space |
| title_fullStr | Investigation of silicon carbide thin films properties at the open cosmos space |
| title_full_unstemmed | Investigation of silicon carbide thin films properties at the open cosmos space |
| title_short | Investigation of silicon carbide thin films properties at the open cosmos space |
| title_sort | investigation of silicon carbide thin films properties at the open cosmos space |
| topic | silicon carbide device structure electrophysical properties space experiment |
| url | https://journals.ssau.ru/pwp/article/viewFile/7076/6935 |
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