Investigation of silicon carbide thin films properties at the open cosmos space

Investigation of silicon carbide thin films properties at the open cosmos space

The problems of stability semiconductor device structures to open space conditions influence are studied. It is shown that complex investigation of electrophysical properties of semiconductor layers during the time of cosmic flight is necessary. Samples of device structures for investigation of open...

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Bibliographic Details
Main Authors: Y.N. Gorelov, A.V. Shcherbak, L.V. Kurganskaya, D.U. Golubeva
Format: Article
Language:English
Published: Povolzhskiy State University of Telecommunications & Informatics 2017-04-01
Series:Физика волновых процессов и радиотехнические системы
Subjects:
silicon carbide
device structure
electrophysical properties
space experiment
Online Access:https://journals.ssau.ru/pwp/article/viewFile/7076/6935

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