Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation
We investigate the interfacial electronic properties of N,N’-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN _2 ) organic semiconductor films grown on silicon dioxide (SiO _2 ) by polarization-resolved second harmonic generation optical spectroscopy. The analysis shows...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2014-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/16/9/093036 |
| _version_ | 1797751112184365056 |
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| author | F Ciccullo L Santamaria E Orabona A Cassinese P Maddalena S Lettieri |
| author_facet | F Ciccullo L Santamaria E Orabona A Cassinese P Maddalena S Lettieri |
| author_sort | F Ciccullo |
| collection | DOAJ |
| description | We investigate the interfacial electronic properties of N,N’-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN _2 ) organic semiconductor films grown on silicon dioxide (SiO _2 ) by polarization-resolved second harmonic generation optical spectroscopy. The analysis shows a non-uniform distribution of charge carriers in PDI8-CN _2 , whose spatial profile is affected by hydrophobic passivation of SiO _2 surfaces by hexamethyldisilazane. An interpretation model strengthened by photoluminescence analysis is developed, based on the presence of the net charge localized at the SiO _2 surface and on consequent charge redistribution in the organic semiconductor. Considerations are expounded suggesting a common and ‘universal’ mechanism for the bias stress effect in p-channel and n-channel organic field-effect transistors, related to proton migration toward SiO _2 gate dielectrics. |
| first_indexed | 2024-03-12T16:43:43Z |
| format | Article |
| id | doaj.art-9c34d6e5b0e64c10bee0ae6158c0b39c |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:43:43Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-9c34d6e5b0e64c10bee0ae6158c0b39c2023-08-08T14:21:17ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116909303610.1088/1367-2630/16/9/093036Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generationF Ciccullo0L Santamaria1E Orabona2A Cassinese3P Maddalena4S Lettieri5Institute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy; Physics Department, University of Naples Federico II, Via Cintia I-80126 Napoli, ItalyPhysics Department, University of Naples Federico II, Via Cintia I-80126 Napoli, ItalyInstitute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy; Physics Department, University of Naples Federico II, Via Cintia I-80126 Napoli, ItalyInstitute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy; Physics Department, University of Naples Federico II, Via Cintia I-80126 Napoli, ItalyInstitute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy; Physics Department, University of Naples Federico II, Via Cintia I-80126 Napoli, ItalyInstitute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, ItalyWe investigate the interfacial electronic properties of N,N’-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN _2 ) organic semiconductor films grown on silicon dioxide (SiO _2 ) by polarization-resolved second harmonic generation optical spectroscopy. The analysis shows a non-uniform distribution of charge carriers in PDI8-CN _2 , whose spatial profile is affected by hydrophobic passivation of SiO _2 surfaces by hexamethyldisilazane. An interpretation model strengthened by photoluminescence analysis is developed, based on the presence of the net charge localized at the SiO _2 surface and on consequent charge redistribution in the organic semiconductor. Considerations are expounded suggesting a common and ‘universal’ mechanism for the bias stress effect in p-channel and n-channel organic field-effect transistors, related to proton migration toward SiO _2 gate dielectrics.https://doi.org/10.1088/1367-2630/16/9/093036organic semiconductorsinterface propertiesnonlinear optical spectroscopyorganic electronicsorganic field-effect transistorssurface optics |
| spellingShingle | F Ciccullo L Santamaria E Orabona A Cassinese P Maddalena S Lettieri Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation New Journal of Physics organic semiconductors interface properties nonlinear optical spectroscopy organic electronics organic field-effect transistors surface optics |
| title | Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation |
| title_full | Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation |
| title_fullStr | Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation |
| title_full_unstemmed | Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation |
| title_short | Electronic properties of the n-type PDI8-CN2 organic semiconductor at the interface with SiO2: addressing the role of adsorbed water molecules by means of optical second-harmonic generation |
| title_sort | electronic properties of the n type pdi8 cn2 organic semiconductor at the interface with sio2 addressing the role of adsorbed water molecules by means of optical second harmonic generation |
| topic | organic semiconductors interface properties nonlinear optical spectroscopy organic electronics organic field-effect transistors surface optics |
| url | https://doi.org/10.1088/1367-2630/16/9/093036 |
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