Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region. The impacts of the most severe intrinsic device variations including work function variation (WFV) and fin line-edg...

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Bibliographic Details
Main Authors: Yin-Nien Chen, Chien-Ju Chen, Ming-Long Fan, Vita Pi-Ho Hu, Pin Su, Ching-Te Chuang
Format: Article
Language:English
Published: MDPI AG 2015-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
tunnel FET (TFET)
FinFET
work function variation (WFV)
line-edge-roughness (LER)
carry-lookahead adder (CLA)
Online Access:http://www.mdpi.com/2079-9268/5/2/101

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