Electron glass effects in amorphous NbSi films
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling...
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| Format: | Article |
| Language: | English |
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SciPost
2020-04-01
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| Series: | SciPost Physics |
| Online Access: | https://scipost.org/SciPostPhys.8.4.056 |
| _version_ | 1818597645877248000 |
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| author | Julien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis Dumoulin |
| author_facet | Julien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis Dumoulin |
| author_sort | Julien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis Dumoulin |
| collection | DOAJ |
| description | We report on non equilibrium field effect in insulating amorphous NbSi thin
films having different Nb contents and thicknesses. The hallmark of an electron
glass, namely the logarithmic growth of a memory dip in conductance versus gate
voltage curves, is observed in all the films after a cooling from room
temperature to 4.2 K. A very rich phenomenology is demonstrated. While the
memory dip width is found to strongly vary with the film parameters, as was
also observed in amorphous indium oxide films, screening lengths and
temperature dependence of the dynamics are closer to what is observed in
granular Al films. Our results demonstrate that the differentiation between
continuous and discontinuous systems is not relevant to understand the
discrepancies reported between various systems in the electron glass features.
We suggest instead that they are not of fundamental nature and stem from
differences in the protocols used and in the electrical inhomogeneity length
scales within each material. |
| first_indexed | 2024-12-16T11:51:06Z |
| format | Article |
| id | doaj.art-9c81aab804b14caa9fc9e6780c182249 |
| institution | Directory Open Access Journal |
| issn | 2542-4653 |
| language | English |
| last_indexed | 2024-12-16T11:51:06Z |
| publishDate | 2020-04-01 |
| publisher | SciPost |
| record_format | Article |
| series | SciPost Physics |
| spelling | doaj.art-9c81aab804b14caa9fc9e6780c1822492022-12-21T22:32:43ZengSciPostSciPost Physics2542-46532020-04-018405610.21468/SciPostPhys.8.4.056Electron glass effects in amorphous NbSi filmsJulien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis DumoulinWe report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.https://scipost.org/SciPostPhys.8.4.056 |
| spellingShingle | Julien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis Dumoulin Electron glass effects in amorphous NbSi films SciPost Physics |
| title | Electron glass effects in amorphous NbSi films |
| title_full | Electron glass effects in amorphous NbSi films |
| title_fullStr | Electron glass effects in amorphous NbSi films |
| title_full_unstemmed | Electron glass effects in amorphous NbSi films |
| title_short | Electron glass effects in amorphous NbSi films |
| title_sort | electron glass effects in amorphous nbsi films |
| url | https://scipost.org/SciPostPhys.8.4.056 |
| work_keys_str_mv | AT juliendelahayethierrygrenetclaireamarrachekikuchivincenthumbertlaurentbergelouisdumoulin electronglasseffectsinamorphousnbsifilms |