Electron glass effects in amorphous NbSi films

Electron glass effects in amorphous NbSi films

We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling...

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Bibliographic Details
Main Author:	Julien Delahaye, Thierry Grenet, Claire A Marrache-Kikuchi, Vincent Humbert, Laurent Bergé, Louis Dumoulin
Format:	Article
Language:	English
Published:	SciPost 2020-04-01
Series:	SciPost Physics
Online Access:	https://scipost.org/SciPostPhys.8.4.056

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