Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons

Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons

The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical i...

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Bibliographic Details
Main Authors: Jianbin Kang, Qian Li, Xiang Fu, Feiliang Chen, Mo Li
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Micromachines
Subjects:
avalanche breakdown
fast neutron
APD
Online Access:https://www.mdpi.com/2072-666X/14/1/86

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