Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design
Rapid advances in high‐resolution chip lithography have accelerated nanophotonic device development on the silicon‐on‐insulator (SOI) platform. The ability to create sub‐wavelength features in silicon has attracted research in photonic band and dispersion engineering and consequently made available...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-06-01
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| Series: | IET Optoelectronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/iet-opt.2019.0077 |
| _version_ | 1798013801310715904 |
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| author | Yannick D'Mello Orad Reshef Santiago Bernal Eslam El‐fiky Yun Wang Maxime Jacques David V. Plant |
| author_facet | Yannick D'Mello Orad Reshef Santiago Bernal Eslam El‐fiky Yun Wang Maxime Jacques David V. Plant |
| author_sort | Yannick D'Mello |
| collection | DOAJ |
| description | Rapid advances in high‐resolution chip lithography have accelerated nanophotonic device development on the silicon‐on‐insulator (SOI) platform. The ability to create sub‐wavelength features in silicon has attracted research in photonic band and dispersion engineering and consequently made available a wide array of device functionalities. By drawing on recent demonstrations, the authors review how periodic, sub‐wavelength structures are used for passive wave manipulation in SOI device design. The optical response is evaluated for both orthogonal polarisations at the telecom wavelengths of 1310 and 1550 nm. The results offer a versatile toolkit for the integration of these features in conventional nanophotonic device geometries. Notable benefits include a fine control of dispersion, wavelength and polarisation selectivity, and broadband performance. |
| first_indexed | 2024-04-11T15:07:16Z |
| format | Article |
| id | doaj.art-9cd552ca92a644e4bf6bad1c51cfcb59 |
| institution | Directory Open Access Journal |
| issn | 1751-8768 1751-8776 |
| language | English |
| last_indexed | 2024-04-11T15:07:16Z |
| publishDate | 2020-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Optoelectronics |
| spelling | doaj.art-9cd552ca92a644e4bf6bad1c51cfcb592022-12-22T04:16:44ZengWileyIET Optoelectronics1751-87681751-87762020-06-0114312513510.1049/iet-opt.2019.0077Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device designYannick D'Mello0Orad Reshef1Santiago Bernal2Eslam El‐fiky3Yun Wang4Maxime Jacques5David V. Plant6Department of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaDepartment of Physics University of Ottawa K1N 6N5 Ottawa CanadaDepartment of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaDepartment of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaDepartment of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaDepartment of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaDepartment of Electrical and Computer Engineering McGill University H3E 0E9 Montreal CanadaRapid advances in high‐resolution chip lithography have accelerated nanophotonic device development on the silicon‐on‐insulator (SOI) platform. The ability to create sub‐wavelength features in silicon has attracted research in photonic band and dispersion engineering and consequently made available a wide array of device functionalities. By drawing on recent demonstrations, the authors review how periodic, sub‐wavelength structures are used for passive wave manipulation in SOI device design. The optical response is evaluated for both orthogonal polarisations at the telecom wavelengths of 1310 and 1550 nm. The results offer a versatile toolkit for the integration of these features in conventional nanophotonic device geometries. Notable benefits include a fine control of dispersion, wavelength and polarisation selectivity, and broadband performance.https://doi.org/10.1049/iet-opt.2019.0077periodic subwavelength structuressilicon-on-insulator photonic device designhigh-resolution chip lithographynanophotonic device developmentsilicon-on-insulator platformsubwavelength features |
| spellingShingle | Yannick D'Mello Orad Reshef Santiago Bernal Eslam El‐fiky Yun Wang Maxime Jacques David V. Plant Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design IET Optoelectronics periodic subwavelength structures silicon-on-insulator photonic device design high-resolution chip lithography nanophotonic device development silicon-on-insulator platform subwavelength features |
| title | Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design |
| title_full | Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design |
| title_fullStr | Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design |
| title_full_unstemmed | Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design |
| title_short | Integration of periodic, sub‐wavelength structures in silicon‐on‐insulator photonic device design |
| title_sort | integration of periodic sub wavelength structures in silicon on insulator photonic device design |
| topic | periodic subwavelength structures silicon-on-insulator photonic device design high-resolution chip lithography nanophotonic device development silicon-on-insulator platform subwavelength features |
| url | https://doi.org/10.1049/iet-opt.2019.0077 |
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