APA (7th ed.) Citation

Yin, C., Gao, T., Wei, H., Chen, Y., & Liu, H. (2023). Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG.

Chicago Style (17th ed.) Citation

Yin, Chenyu, Tianzhi Gao, Hao Wei, Yaolin Chen, and Hongxia Liu. Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG, 2023.

MLA (9th ed.) Citation

Yin, Chenyu, et al. Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG, 2023.

Warning: These citations may not always be 100% accurate.