Yin, C., Gao, T., Wei, H., Chen, Y., & Liu, H. (2023). Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG.
Chicago Style (17th ed.) CitationYin, Chenyu, Tianzhi Gao, Hao Wei, Yaolin Chen, and Hongxia Liu. Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG, 2023.
MLA (9th ed.) CitationYin, Chenyu, et al. Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. MDPI AG, 2023.
Warning: These citations may not always be 100% accurate.