Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect
In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that,...
| Үндсэн зохиолчид: | , , , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
MDPI AG
2023-08-01
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| Цуврал: | Micromachines |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2072-666X/14/8/1620 |