A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reve...

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Bibliographic Details
Main Authors: Zhigang Wang, Chong Yang, Xiaobing Huang
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Micromachines
Subjects:
reverse-conducting IGBT
snapback-free
thyristor
electron-blocking
superjunction IGBT
SOA
Online Access:https://www.mdpi.com/2072-666X/14/3/646

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