Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi2(SexTe1-x)3...

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Bibliographic Details
Main Authors:	Paixão José A., Henriques Marta S.C., Micale Carlotta, Lopes Elsa B., Pereira Vanda M., Gonçalves António P.
Format:	Article
Language:	English
Published:	EDP Sciences 2020-01-01
Series:	EPJ Web of Conferences
Online Access:	https://www.epj-conferences.org/articles/epjconf/pdf/2020/09/epjconf_cmpnc2019_01001.pdf

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