Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures
Energy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of energy by using huge external bias voltage. So far...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5140689 |
| _version_ | 1818581702047432704 |
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| author | Rohit Pant Deependra Kumar Singh Arun Malla Chowdhury Basanta Roul K. K. Nanda S. B. Krupanidhi |
| author_facet | Rohit Pant Deependra Kumar Singh Arun Malla Chowdhury Basanta Roul K. K. Nanda S. B. Krupanidhi |
| author_sort | Rohit Pant |
| collection | DOAJ |
| description | Energy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of energy by using huge external bias voltage. So far, thin films have been widely used for photodetection of various bands of electromagnetic radiation. The only property which holds them back is the slower performance and lower responsivity compared to nanostructure-based devices. However, the disadvantage associated with nanostructure-based photodetectors is that they lack scalability for mass production or commercialization, due to the complex and expensive device fabrication steps. One of the plausible solutions for this limitation could be the use of hybrid structures, which are the combination of high-quality crystal materials such as ZnO, (Al, Ga, In)N, and GaAs with 2D materials consisting of MoS2, graphene, WSe2, and SnS2. This would provide extensive control over bandgap engineering, which could be used for scalable modular device fabrication. These approaches promise the development of photodetectors with relatively higher responsivities as well as self-powered photodetection. The current perspective focuses on the advancements in III-nitride-based photodetectors and their promising potentials for self-powered, broadband, and ultrafast photodetectors using hybrid III-nitride/2D interfaces. |
| first_indexed | 2024-12-16T07:37:41Z |
| format | Article |
| id | doaj.art-9db050da25ef4a7684b56ad9914d2fcc |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-16T07:37:41Z |
| publishDate | 2020-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-9db050da25ef4a7684b56ad9914d2fcc2022-12-21T22:39:11ZengAIP Publishing LLCAPL Materials2166-532X2020-02-0182020907020907-1110.1063/1.5140689Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structuresRohit Pant0Deependra Kumar Singh1Arun Malla Chowdhury2Basanta Roul3K. K. Nanda4S. B. Krupanidhi5Materials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560012, IndiaEnergy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of energy by using huge external bias voltage. So far, thin films have been widely used for photodetection of various bands of electromagnetic radiation. The only property which holds them back is the slower performance and lower responsivity compared to nanostructure-based devices. However, the disadvantage associated with nanostructure-based photodetectors is that they lack scalability for mass production or commercialization, due to the complex and expensive device fabrication steps. One of the plausible solutions for this limitation could be the use of hybrid structures, which are the combination of high-quality crystal materials such as ZnO, (Al, Ga, In)N, and GaAs with 2D materials consisting of MoS2, graphene, WSe2, and SnS2. This would provide extensive control over bandgap engineering, which could be used for scalable modular device fabrication. These approaches promise the development of photodetectors with relatively higher responsivities as well as self-powered photodetection. The current perspective focuses on the advancements in III-nitride-based photodetectors and their promising potentials for self-powered, broadband, and ultrafast photodetectors using hybrid III-nitride/2D interfaces.http://dx.doi.org/10.1063/1.5140689 |
| spellingShingle | Rohit Pant Deependra Kumar Singh Arun Malla Chowdhury Basanta Roul K. K. Nanda S. B. Krupanidhi Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures APL Materials |
| title | Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures |
| title_full | Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures |
| title_fullStr | Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures |
| title_full_unstemmed | Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures |
| title_short | Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures |
| title_sort | next generation self powered and ultrafast photodetectors based on iii nitride hybrid structures |
| url | http://dx.doi.org/10.1063/1.5140689 |
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