Modeling and enhancing magnetic immunity of STT-MRAM

In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in the standby, active read and active write mode...

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Bibliographic Details
Main Authors: Guangjun Zhang, Yanfeng Jiang
Format: Article
Language:English
Published: AIP Publishing LLC 2023-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/9.0000521

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