Ultra-broad spectral photo-response in FePS3 air-stable devices

Abstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband phot...

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Main Authors: Maria Ramos, Felix Carrascoso, Riccardo Frisenda, Patricia Gant, Samuel Mañas-Valero, Dorye L. Esteras, José J. Baldoví, Eugenio Coronado, Andres Castellanos-Gomez, M. Reyes Calvo
Format: Article
Language:English
Published: Nature Portfolio 2021-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-021-00199-z
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author Maria Ramos
Felix Carrascoso
Riccardo Frisenda
Patricia Gant
Samuel Mañas-Valero
Dorye L. Esteras
José J. Baldoví
Eugenio Coronado
Andres Castellanos-Gomez
M. Reyes Calvo
author_facet Maria Ramos
Felix Carrascoso
Riccardo Frisenda
Patricia Gant
Samuel Mañas-Valero
Dorye L. Esteras
José J. Baldoví
Eugenio Coronado
Andres Castellanos-Gomez
M. Reyes Calvo
author_sort Maria Ramos
collection DOAJ
description Abstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air.
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spelling doaj.art-9dfc6e9a81e8473b9f81053396768ccf2022-12-21T23:13:24ZengNature Portfolionpj 2D Materials and Applications2397-71322021-02-01511910.1038/s41699-021-00199-zUltra-broad spectral photo-response in FePS3 air-stable devicesMaria Ramos0Felix Carrascoso1Riccardo Frisenda2Patricia Gant3Samuel Mañas-Valero4Dorye L. Esteras5José J. Baldoví6Eugenio Coronado7Andres Castellanos-Gomez8M. Reyes Calvo9Departamento de Física Aplicada, Universidad de AlicanteMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Instituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Departamento de Física Aplicada, Universidad de AlicanteAbstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air.https://doi.org/10.1038/s41699-021-00199-z
spellingShingle Maria Ramos
Felix Carrascoso
Riccardo Frisenda
Patricia Gant
Samuel Mañas-Valero
Dorye L. Esteras
José J. Baldoví
Eugenio Coronado
Andres Castellanos-Gomez
M. Reyes Calvo
Ultra-broad spectral photo-response in FePS3 air-stable devices
npj 2D Materials and Applications
title Ultra-broad spectral photo-response in FePS3 air-stable devices
title_full Ultra-broad spectral photo-response in FePS3 air-stable devices
title_fullStr Ultra-broad spectral photo-response in FePS3 air-stable devices
title_full_unstemmed Ultra-broad spectral photo-response in FePS3 air-stable devices
title_short Ultra-broad spectral photo-response in FePS3 air-stable devices
title_sort ultra broad spectral photo response in feps3 air stable devices
url https://doi.org/10.1038/s41699-021-00199-z
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