Ultra-broad spectral photo-response in FePS3 air-stable devices
Abstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband phot...
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Nature Portfolio
2021-02-01
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Series: | npj 2D Materials and Applications |
Online Access: | https://doi.org/10.1038/s41699-021-00199-z |
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author | Maria Ramos Felix Carrascoso Riccardo Frisenda Patricia Gant Samuel Mañas-Valero Dorye L. Esteras José J. Baldoví Eugenio Coronado Andres Castellanos-Gomez M. Reyes Calvo |
author_facet | Maria Ramos Felix Carrascoso Riccardo Frisenda Patricia Gant Samuel Mañas-Valero Dorye L. Esteras José J. Baldoví Eugenio Coronado Andres Castellanos-Gomez M. Reyes Calvo |
author_sort | Maria Ramos |
collection | DOAJ |
description | Abstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air. |
first_indexed | 2024-12-14T06:35:04Z |
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id | doaj.art-9dfc6e9a81e8473b9f81053396768ccf |
institution | Directory Open Access Journal |
issn | 2397-7132 |
language | English |
last_indexed | 2024-12-14T06:35:04Z |
publishDate | 2021-02-01 |
publisher | Nature Portfolio |
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series | npj 2D Materials and Applications |
spelling | doaj.art-9dfc6e9a81e8473b9f81053396768ccf2022-12-21T23:13:24ZengNature Portfolionpj 2D Materials and Applications2397-71322021-02-01511910.1038/s41699-021-00199-zUltra-broad spectral photo-response in FePS3 air-stable devicesMaria Ramos0Felix Carrascoso1Riccardo Frisenda2Patricia Gant3Samuel Mañas-Valero4Dorye L. Esteras5José J. Baldoví6Eugenio Coronado7Andres Castellanos-Gomez8M. Reyes Calvo9Departamento de Física Aplicada, Universidad de AlicanteMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Instituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaInstituto de Ciencia Molecular (ICMol), Universitat de ValènciaMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)Departamento de Física Aplicada, Universidad de AlicanteAbstract Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air.https://doi.org/10.1038/s41699-021-00199-z |
spellingShingle | Maria Ramos Felix Carrascoso Riccardo Frisenda Patricia Gant Samuel Mañas-Valero Dorye L. Esteras José J. Baldoví Eugenio Coronado Andres Castellanos-Gomez M. Reyes Calvo Ultra-broad spectral photo-response in FePS3 air-stable devices npj 2D Materials and Applications |
title | Ultra-broad spectral photo-response in FePS3 air-stable devices |
title_full | Ultra-broad spectral photo-response in FePS3 air-stable devices |
title_fullStr | Ultra-broad spectral photo-response in FePS3 air-stable devices |
title_full_unstemmed | Ultra-broad spectral photo-response in FePS3 air-stable devices |
title_short | Ultra-broad spectral photo-response in FePS3 air-stable devices |
title_sort | ultra broad spectral photo response in feps3 air stable devices |
url | https://doi.org/10.1038/s41699-021-00199-z |
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