A comprehensive analytical description of the asymmetric active snubber
Abstract Power modules for several hundred amperes suffer from a high stray inductance compared to discrete setups at similar current density. The use of silicon carbide in such modules is beneficial but due to the high stray inductance, the switching speed must be reduced to keep the voltage oversh...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-01-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12367 |