Analysis of sapphire- chemical mechanical polishing using digital image processing
This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velo...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
The Japan Society of Mechanical Engineers
2016-02-01
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| Series: | Mechanical Engineering Journal |
| Subjects: | |
| Online Access: | https://www.jstage.jst.go.jp/article/mej/3/1/3_15-00509/_pdf/-char/en |
| _version_ | 1818684563702939648 |
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| author | Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA |
| author_facet | Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA |
| author_sort | Michio UNEDA |
| collection | DOAJ |
| description | This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, remarkably affected the stability of the removal rate. The effect of the linear velocity ratio was discussed from the viewpoints of the slurry type. It was found that the slurry type changed the slurry film thickness between the wafer and the polishing pad. The relationship between the slurry film thickness and the surface asperity of the polishing pad was found to affect the linear velocity and the removal rate. As a result, we concluded the linear velocity ratio was an effective parameter for considering the CMP mechanism. |
| first_indexed | 2024-12-17T10:52:38Z |
| format | Article |
| id | doaj.art-9e50b0c0687d4608b681a3d62948f445 |
| institution | Directory Open Access Journal |
| issn | 2187-9745 |
| language | English |
| last_indexed | 2024-12-17T10:52:38Z |
| publishDate | 2016-02-01 |
| publisher | The Japan Society of Mechanical Engineers |
| record_format | Article |
| series | Mechanical Engineering Journal |
| spelling | doaj.art-9e50b0c0687d4608b681a3d62948f4452022-12-21T21:51:56ZengThe Japan Society of Mechanical EngineersMechanical Engineering Journal2187-97452016-02-013115-0050915-0050910.1299/mej.15-00509mejAnalysis of sapphire- chemical mechanical polishing using digital image processingMichio UNEDA0Keiichi TAKANO1Koji KOYAMA2Hideo AIDA3Ken-ichi ISHIKAWA4Kanazawa institute of TechnologyKanazawa institute of TechnologyNamiki Precision Jewel Co., Ltd.Namiki Precision Jewel Co., Ltd.Kanazawa institute of TechnologyThis study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, remarkably affected the stability of the removal rate. The effect of the linear velocity ratio was discussed from the viewpoints of the slurry type. It was found that the slurry type changed the slurry film thickness between the wafer and the polishing pad. The relationship between the slurry film thickness and the surface asperity of the polishing pad was found to affect the linear velocity and the removal rate. As a result, we concluded the linear velocity ratio was an effective parameter for considering the CMP mechanism.https://www.jstage.jst.go.jp/article/mej/3/1/3_15-00509/_pdf/-char/ensapphire- cmpcontact interfacelinear velocity ratioremoval rateslurry film thicknesscontact angle of slurry |
| spellingShingle | Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA Analysis of sapphire- chemical mechanical polishing using digital image processing Mechanical Engineering Journal sapphire- cmp contact interface linear velocity ratio removal rate slurry film thickness contact angle of slurry |
| title | Analysis of sapphire- chemical mechanical polishing using digital image processing |
| title_full | Analysis of sapphire- chemical mechanical polishing using digital image processing |
| title_fullStr | Analysis of sapphire- chemical mechanical polishing using digital image processing |
| title_full_unstemmed | Analysis of sapphire- chemical mechanical polishing using digital image processing |
| title_short | Analysis of sapphire- chemical mechanical polishing using digital image processing |
| title_sort | analysis of sapphire chemical mechanical polishing using digital image processing |
| topic | sapphire- cmp contact interface linear velocity ratio removal rate slurry film thickness contact angle of slurry |
| url | https://www.jstage.jst.go.jp/article/mej/3/1/3_15-00509/_pdf/-char/en |
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