Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model
Amorphous Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique. Surface morphology with the chemical composition of the prepared glass was examined using SEM and EDS analysis respectively. Dielectric properties and a.c. conductivity of the multicomponent Ge10−xSe...
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| Format: | Article |
| Language: | English |
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Elsevier
2019-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718324525 |
| _version_ | 1818322134204678144 |
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| author | Pravin Kumar Singh S.K. Sharma S.K. Tripathi D.K. Dwivedi |
| author_facet | Pravin Kumar Singh S.K. Sharma S.K. Tripathi D.K. Dwivedi |
| author_sort | Pravin Kumar Singh |
| collection | DOAJ |
| description | Amorphous Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique. Surface morphology with the chemical composition of the prepared glass was examined using SEM and EDS analysis respectively. Dielectric properties and a.c. conductivity of the multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses have been examined in the frequency range 100 Hz–1 MHz and temperature range 303–328 K. It was noticed that dielectric constant and dielectric loss decreases with the increase of frequency and increases with the increase of temperatures. Frequency and temperature dependence of dielectric constant was explained by orientational polarization. The variation of dielectric loss with frequency and temperature was explained by conduction loss and theory of single polaron hopping of charge carriers suggested by Elliot and Shimakawa for chalcogenide glasses. The experimental results show that a.c. conductivity follows the power law ωs where s < 1 and value of s decreases with the increase of temperature. The present findings of a.c. conductivity and variation of s with temperatures are reasonably well interpreted in terms of CBH model. Keywords: Chalcogenide glasses, Ac conductivity, Dielectric relaxation, CBH model, Activation energy |
| first_indexed | 2024-12-13T10:51:58Z |
| format | Article |
| id | doaj.art-9e5e39bfa13f43d1bf1fdf543ce69842 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-13T10:51:58Z |
| publishDate | 2019-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-9e5e39bfa13f43d1bf1fdf543ce698422022-12-21T23:49:47ZengElsevierResults in Physics2211-37972019-03-0112223236Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH modelPravin Kumar Singh0S.K. Sharma1S.K. Tripathi2D.K. Dwivedi3Amorphous Semiconductor Research Lab, Department of Applied Science, M. M. M. University of Technology, Gorakhpur 273010, IndiaDepartment of Physics, Harcourt Butler Technical University, Kanpur 208002, IndiaDepartment of Physics, Punjab University, Chandigarh 160014, IndiaAmorphous Semiconductor Research Lab, Department of Applied Science, M. M. M. University of Technology, Gorakhpur 273010, IndiaAmorphous Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique. Surface morphology with the chemical composition of the prepared glass was examined using SEM and EDS analysis respectively. Dielectric properties and a.c. conductivity of the multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses have been examined in the frequency range 100 Hz–1 MHz and temperature range 303–328 K. It was noticed that dielectric constant and dielectric loss decreases with the increase of frequency and increases with the increase of temperatures. Frequency and temperature dependence of dielectric constant was explained by orientational polarization. The variation of dielectric loss with frequency and temperature was explained by conduction loss and theory of single polaron hopping of charge carriers suggested by Elliot and Shimakawa for chalcogenide glasses. The experimental results show that a.c. conductivity follows the power law ωs where s < 1 and value of s decreases with the increase of temperature. The present findings of a.c. conductivity and variation of s with temperatures are reasonably well interpreted in terms of CBH model. Keywords: Chalcogenide glasses, Ac conductivity, Dielectric relaxation, CBH model, Activation energyhttp://www.sciencedirect.com/science/article/pii/S2211379718324525 |
| spellingShingle | Pravin Kumar Singh S.K. Sharma S.K. Tripathi D.K. Dwivedi Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model Results in Physics |
| title | Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model |
| title_full | Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model |
| title_fullStr | Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model |
| title_full_unstemmed | Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model |
| title_short | Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model |
| title_sort | study of dielectric relaxation and thermally activated a c conduction in multicomponent ge10 xse60te30inx 0 ≤ x ≤ 6 chalcogenide glasses using cbh model |
| url | http://www.sciencedirect.com/science/article/pii/S2211379718324525 |
| work_keys_str_mv | AT pravinkumarsingh studyofdielectricrelaxationandthermallyactivatedacconductioninmulticomponentge10xse60te30inx0x6chalcogenideglassesusingcbhmodel AT sksharma studyofdielectricrelaxationandthermallyactivatedacconductioninmulticomponentge10xse60te30inx0x6chalcogenideglassesusingcbhmodel AT sktripathi studyofdielectricrelaxationandthermallyactivatedacconductioninmulticomponentge10xse60te30inx0x6chalcogenideglassesusingcbhmodel AT dkdwivedi studyofdielectricrelaxationandthermallyactivatedacconductioninmulticomponentge10xse60te30inx0x6chalcogenideglassesusingcbhmodel |