Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters

The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well...

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Main Authors: Vytautas Bleizgys, Andrius Platakis
Format: Article
Language:English
Published: Vilnius Gediminas Technical University 2010-02-01
Series:Mokslas: Lietuvos Ateitis
Subjects:
Online Access:http://journals.vgtu.lt/index.php/MLA/article/view/10071
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author Vytautas Bleizgys
Andrius Platakis
author_facet Vytautas Bleizgys
Andrius Platakis
author_sort Vytautas Bleizgys
collection DOAJ
description The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well. Article in Lithuanian Valdymo grandinių įtakos IGBT tranzistoriaus dinaminiams parametrams tyrimas Santrauka Ištirta dvipolių tranzistorių su izoliuota užtūra (IGBT angl. Insulated Gate Bipolar Transistor) valdymo grandinių parametrų įtaka tranzistorių kolektoriaus srovės ir kolektoriaus-emiterio įtampos frontų trukmei, tranzistoriui atsidarant ir užsidarant. Ištirta grandinių parametrų įtaka IGBT tranzistorių modulio, naudojamo inverteryje, šilimui. Reikšminiai žodžiai: IGBT tranzistorius, dinaminiai parametrai, inverteris, dažnio keitiklis, asinchroninis variklis.
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spelling doaj.art-9e9fd080b27243f5b1fd5e727fb9eadf2022-12-21T20:17:14ZengVilnius Gediminas Technical UniversityMokslas: Lietuvos Ateitis2029-23412029-22522010-02-012110.3846/mla.2010.01390Investigation of impact of the gate circuitry on IGBT transistor dynamic parametersVytautas Bleizgys0Andrius Platakis1Vilniaus Gedimino technikos universitetas, LithuaniaPuslaidininkių fizikos institutas, LithuaniaThe impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well. Article in Lithuanian Valdymo grandinių įtakos IGBT tranzistoriaus dinaminiams parametrams tyrimas Santrauka Ištirta dvipolių tranzistorių su izoliuota užtūra (IGBT angl. Insulated Gate Bipolar Transistor) valdymo grandinių parametrų įtaka tranzistorių kolektoriaus srovės ir kolektoriaus-emiterio įtampos frontų trukmei, tranzistoriui atsidarant ir užsidarant. Ištirta grandinių parametrų įtaka IGBT tranzistorių modulio, naudojamo inverteryje, šilimui. Reikšminiai žodžiai: IGBT tranzistorius, dinaminiai parametrai, inverteris, dažnio keitiklis, asinchroninis variklis.http://journals.vgtu.lt/index.php/MLA/article/view/10071IGBT transistordynamic parametersinverterfrequency converterAC induction motor
spellingShingle Vytautas Bleizgys
Andrius Platakis
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis
IGBT transistor
dynamic parameters
inverter
frequency converter
AC induction motor
title Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
title_full Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
title_fullStr Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
title_full_unstemmed Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
title_short Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
title_sort investigation of impact of the gate circuitry on igbt transistor dynamic parameters
topic IGBT transistor
dynamic parameters
inverter
frequency converter
AC induction motor
url http://journals.vgtu.lt/index.php/MLA/article/view/10071
work_keys_str_mv AT vytautasbleizgys investigationofimpactofthegatecircuitryonigbttransistordynamicparameters
AT andriusplatakis investigationofimpactofthegatecircuitryonigbttransistordynamicparameters