Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vilnius Gediminas Technical University
2010-02-01
|
| Series: | Mokslas: Lietuvos Ateitis |
| Subjects: | |
| Online Access: | http://journals.vgtu.lt/index.php/MLA/article/view/10071 |