Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
<p>Abstract</p> <p>We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2009-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9488-2 |
| _version_ | 1797759467058626560 |
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| author | Bouravleuv AD Soshnikov IP Dubrovskii VG Werner P Arakcheeva EM Tanklevskaya EM Cirlin GE Samsonenko Yu |
| author_facet | Bouravleuv AD Soshnikov IP Dubrovskii VG Werner P Arakcheeva EM Tanklevskaya EM Cirlin GE Samsonenko Yu |
| author_sort | Bouravleuv AD |
| collection | DOAJ |
| description | <p>Abstract</p> <p>We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.</p> |
| first_indexed | 2024-03-12T18:44:53Z |
| format | Article |
| id | doaj.art-9eb8ac143d204e1181e1b251979c494a |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:44:53Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-9eb8ac143d204e1181e1b251979c494a2023-08-02T07:45:29ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0152360363Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B SubstrateBouravleuv ADSoshnikov IPDubrovskii VGWerner PArakcheeva EMTanklevskaya EMCirlin GESamsonenko Yu<p>Abstract</p> <p>We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.</p>http://dx.doi.org/10.1007/s11671-009-9488-2Molecular beam epitaxyNanowiresGaAsSolar cellsPhotovoltaic properties |
| spellingShingle | Bouravleuv AD Soshnikov IP Dubrovskii VG Werner P Arakcheeva EM Tanklevskaya EM Cirlin GE Samsonenko Yu Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate Nanoscale Research Letters Molecular beam epitaxy Nanowires GaAs Solar cells Photovoltaic properties |
| title | Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate |
| title_full | Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate |
| title_fullStr | Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate |
| title_full_unstemmed | Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate |
| title_short | Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate |
| title_sort | photovoltaic properties of p doped gaas nanowire arrays grown on n type gaas 111 b substrate |
| topic | Molecular beam epitaxy Nanowires GaAs Solar cells Photovoltaic properties |
| url | http://dx.doi.org/10.1007/s11671-009-9488-2 |
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