Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
Abstract Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double nega...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2020-10-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202000991 |
| _version_ | 1818772932689657856 |
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| author | Kil‐Su Jung Keun Heo Min‐Je Kim Maksim Andreev Seunghwan Seo Jin‐Ok Kim Ji‐Hye Lim Kwan‐Ho Kim Sungho Kim Ki Seok Kim Geun Yong Yeom Jeong Ho Cho Jin‐Hong Park |
| author_facet | Kil‐Su Jung Keun Heo Min‐Je Kim Maksim Andreev Seunghwan Seo Jin‐Ok Kim Ji‐Hye Lim Kwan‐Ho Kim Sungho Kim Ki Seok Kim Geun Yong Yeom Jeong Ho Cho Jin‐Hong Park |
| author_sort | Kil‐Su Jung |
| collection | DOAJ |
| description | Abstract Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon. |
| first_indexed | 2024-12-18T10:17:13Z |
| format | Article |
| id | doaj.art-9ed279cb84554ee68af62596ff4f07e0 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-18T10:17:13Z |
| publishDate | 2020-10-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-9ed279cb84554ee68af62596ff4f07e02022-12-21T21:11:15ZengWileyAdvanced Science2198-38442020-10-01719n/an/a10.1002/advs.202000991Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid StructureKil‐Su Jung0Keun Heo1Min‐Je Kim2Maksim Andreev3Seunghwan Seo4Jin‐Ok Kim5Ji‐Hye Lim6Kwan‐Ho Kim7Sungho Kim8Ki Seok Kim9Geun Yong Yeom10Jeong Ho Cho11Jin‐Hong Park12Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaSKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South KoreaJet Propulsion Laboratory (JPL) California Institute of Technology Pasadena CA 91109 USAResearch Laboratory of Electronics Massachusetts Institute of Technology (MIT) Cambridge MA 02139‐4307 USASchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐746 South KoreaDepartment of Chemical and Biomolecular Engineering Yonsei University Seoul 120‐749 South KoreaDepartment of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440‐746 South KoreaAbstract Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.https://doi.org/10.1002/advs.202000991HfS2hybrid structuresnegative differential resistance (NDR)pentacene |
| spellingShingle | Kil‐Su Jung Keun Heo Min‐Je Kim Maksim Andreev Seunghwan Seo Jin‐Ok Kim Ji‐Hye Lim Kwan‐Ho Kim Sungho Kim Ki Seok Kim Geun Yong Yeom Jeong Ho Cho Jin‐Hong Park Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure Advanced Science HfS2 hybrid structures negative differential resistance (NDR) pentacene |
| title | Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure |
| title_full | Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure |
| title_fullStr | Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure |
| title_full_unstemmed | Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure |
| title_short | Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure |
| title_sort | double negative differential resistance device based on hafnium disulfide pentacene hybrid structure |
| topic | HfS2 hybrid structures negative differential resistance (NDR) pentacene |
| url | https://doi.org/10.1002/advs.202000991 |
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