| Summary: | For several years now, organic–inorganic hybrid perovskite materials have shown remarkable progress in the field of opto-electronic devices. Herein, we introduce a cathode-side passivation layer of poly(methyl methacrylate) (PMMA) for a highly efficient and stable self-powered CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite-based photodiode. For effective noise–current suppression, the PMMA passivation layer was employed between a light-absorbing layer of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> (MAPbI<sub>3</sub>) perovskite and an electron transport layer of [6,6]-phenyl-C61-butyric acid methyl ester. Due to its passivation effect on defects in perovskite film, the PMMA passivation layer can effectively suppress interface recombination and reduce the leakage/noise current. Without external bias, the MAPbI<sub>3</sub> photodiode with the PMMA layer demonstrated a significantly high specific detectivity value (~1.07 × 10<sup>12</sup> Jones) compared to that of a conventional MAPbI<sub>3</sub> photodiode without a PMMA layer. Along with the enhanced specific detectivity, a wide linear dynamic response (~127 dB) with rapid rise (~50 μs) and decay (~17 μs) response times was obtained. Furthermore, highly durable dynamic responses of the PMMA-passivated MAPbI<sub>3</sub> photodiode were observed even after a long storage time of 500 h. The results achieved with the cathode-side PMMA-passivated perovskite photodiodes represent a new means by which to realize highly sensitive and stable self-powered photodiodes for use in developing novel opto-electronic devices.
|
|---|