Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films

Abstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the to...

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Main Authors: Gregory M. Stephen, Owen. A. Vail, Jiwei Lu, William A. Beck, Patrick J. Taylor, Adam L. Friedman
Format: Article
Language:English
Published: Nature Portfolio 2020-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-020-61672-1
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author Gregory M. Stephen
Owen. A. Vail
Jiwei Lu
William A. Beck
Patrick J. Taylor
Adam L. Friedman
author_facet Gregory M. Stephen
Owen. A. Vail
Jiwei Lu
William A. Beck
Patrick J. Taylor
Adam L. Friedman
author_sort Gregory M. Stephen
collection DOAJ
description Abstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance.
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spelling doaj.art-9f19ef1a608f4ff8a3f8d91f381a50d62022-12-21T20:35:24ZengNature PortfolioScientific Reports2045-23222020-03-011011710.1038/s41598-020-61672-1Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin FilmsGregory M. Stephen0Owen. A. Vail1Jiwei Lu2William A. Beck3Patrick J. Taylor4Adam L. Friedman5Laboratory for Physical SciencesArmy Research LaboratoryDepartment of Materials Science and Engineering, University of VirginiaArmy Research LaboratoryArmy Research LaboratoryLaboratory for Physical SciencesAbstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance.https://doi.org/10.1038/s41598-020-61672-1
spellingShingle Gregory M. Stephen
Owen. A. Vail
Jiwei Lu
William A. Beck
Patrick J. Taylor
Adam L. Friedman
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
Scientific Reports
title Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
title_full Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
title_fullStr Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
title_full_unstemmed Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
title_short Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
title_sort weak antilocalization and anisotropic magnetoresistance as a probe of surface states in topological bi2texse3 x thin films
url https://doi.org/10.1038/s41598-020-61672-1
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