5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure
This paper presents a 5.8 GHz RF−DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple−stack structure. An RF isolation network (RFIN) for the multiple-stack RF−DC converter is proposed to combine the DC output voltage...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/19/15/3257 |
| Summary: | This paper presents a 5.8 GHz RF−DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple−stack structure. An RF isolation network (RFIN) for the multiple-stack RF−DC converter is proposed to combine the DC output voltage of each stack without separating its RF ground from the DC ground. The RFIN is designed using micro-strip transmission lines on a single-layer printed circuit board (PCB) with a common ground for the bottom plate. A 4-stack RF−DC converter based on a class-F voltage doubler for each stack was implemented to verify the proposed RFIN for the multiple-stack and common-ground structure. The performances of the implemented 4-stack RF−DC converter were evaluated in comparison to the single-stack converter that was also implemented. The size of the implemented 4-stack RF−DC converter using bare-chip Schottky diodes is 24 mm × 123 mm on a single-layer PCB. For an input power of 21 dBm for each stack of the RF−DC converter with a load resistance of 4 kΩ, a high efficiency of 73.1% and a high DC output voltage of 34.2 V were obtained. |
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| ISSN: | 1424-8220 |