5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure
This paper presents a 5.8 GHz RF−DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple−stack structure. An RF isolation network (RFIN) for the multiple-stack RF−DC converter is proposed to combine the DC output voltage...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-07-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/19/15/3257 |
| _version_ | 1811297761371357184 |
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| author | Jongseok Bae Sang-Hwa Yi Woojin Choi Hyungmo Koo Keum Cheol Hwang Kang-Yoon Lee Youngoo Yang |
| author_facet | Jongseok Bae Sang-Hwa Yi Woojin Choi Hyungmo Koo Keum Cheol Hwang Kang-Yoon Lee Youngoo Yang |
| author_sort | Jongseok Bae |
| collection | DOAJ |
| description | This paper presents a 5.8 GHz RF−DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple−stack structure. An RF isolation network (RFIN) for the multiple-stack RF−DC converter is proposed to combine the DC output voltage of each stack without separating its RF ground from the DC ground. The RFIN is designed using micro-strip transmission lines on a single-layer printed circuit board (PCB) with a common ground for the bottom plate. A 4-stack RF−DC converter based on a class-F voltage doubler for each stack was implemented to verify the proposed RFIN for the multiple-stack and common-ground structure. The performances of the implemented 4-stack RF−DC converter were evaluated in comparison to the single-stack converter that was also implemented. The size of the implemented 4-stack RF−DC converter using bare-chip Schottky diodes is 24 mm × 123 mm on a single-layer PCB. For an input power of 21 dBm for each stack of the RF−DC converter with a load resistance of 4 kΩ, a high efficiency of 73.1% and a high DC output voltage of 34.2 V were obtained. |
| first_indexed | 2024-04-13T06:10:00Z |
| format | Article |
| id | doaj.art-9f653975dbe14e39b5610984e6032efe |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-13T06:10:00Z |
| publishDate | 2019-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-9f653975dbe14e39b5610984e6032efe2022-12-22T02:59:06ZengMDPI AGSensors1424-82202019-07-011915325710.3390/s19153257s191532575.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack StructureJongseok Bae0Sang-Hwa Yi1Woojin Choi2Hyungmo Koo3Keum Cheol Hwang4Kang-Yoon Lee5Youngoo Yang6College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaElectrical Environment Research Center, Korea Electrotechnology Research Institute, Changwon-si 51543, KoreaCollege of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaCollege of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaCollege of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaCollege of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaCollege of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobur-ro, Jangan-gu, Suwon 16419, KoreaThis paper presents a 5.8 GHz RF−DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple−stack structure. An RF isolation network (RFIN) for the multiple-stack RF−DC converter is proposed to combine the DC output voltage of each stack without separating its RF ground from the DC ground. The RFIN is designed using micro-strip transmission lines on a single-layer printed circuit board (PCB) with a common ground for the bottom plate. A 4-stack RF−DC converter based on a class-F voltage doubler for each stack was implemented to verify the proposed RFIN for the multiple-stack and common-ground structure. The performances of the implemented 4-stack RF−DC converter were evaluated in comparison to the single-stack converter that was also implemented. The size of the implemented 4-stack RF−DC converter using bare-chip Schottky diodes is 24 mm × 123 mm on a single-layer PCB. For an input power of 21 dBm for each stack of the RF−DC converter with a load resistance of 4 kΩ, a high efficiency of 73.1% and a high DC output voltage of 34.2 V were obtained.https://www.mdpi.com/1424-8220/19/15/3257microwave power transferrectenna arrayrectifiermultiple-stack RF–DC converterRF isolation networkvoltage doubler |
| spellingShingle | Jongseok Bae Sang-Hwa Yi Woojin Choi Hyungmo Koo Keum Cheol Hwang Kang-Yoon Lee Youngoo Yang 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure Sensors microwave power transfer rectenna array rectifier multiple-stack RF–DC converter RF isolation network voltage doubler |
| title | 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure |
| title_full | 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure |
| title_fullStr | 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure |
| title_full_unstemmed | 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure |
| title_short | 5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure |
| title_sort | 5 8 ghz high efficiency rf dc converter based on common ground multiple stack structure |
| topic | microwave power transfer rectenna array rectifier multiple-stack RF–DC converter RF isolation network voltage doubler |
| url | https://www.mdpi.com/1424-8220/19/15/3257 |
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