Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes
An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The...
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MDPI AG
2021-09-01
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| Series: | Mathematics |
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| Online Access: | https://www.mdpi.com/2227-7390/9/17/2159 |
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| author | María José Ibáñez Domingo Barrera David Maldonado Rafael Yáñez Juan Bautista Roldán |
| author_facet | María José Ibáñez Domingo Barrera David Maldonado Rafael Yáñez Juan Bautista Roldán |
| author_sort | María José Ibáñez |
| collection | DOAJ |
| description | An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices based on hafnium oxide as their dielectric layer. The experimental curves are highly non-linear, due to the underlying physics controlling the device operation, so that a stable numerical procedure is needed. The results also allow promising expectations in the massive extraction of new parameters that can help in the characterization of the electrical device behavior. |
| first_indexed | 2024-03-10T08:07:04Z |
| format | Article |
| id | doaj.art-9f74494588b3448695f720bf44f7d725 |
| institution | Directory Open Access Journal |
| issn | 2227-7390 |
| language | English |
| last_indexed | 2024-03-10T08:07:04Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Mathematics |
| spelling | doaj.art-9f74494588b3448695f720bf44f7d7252023-11-22T10:58:48ZengMDPI AGMathematics2227-73902021-09-01917215910.3390/math9172159Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling PurposesMaría José Ibáñez0Domingo Barrera1David Maldonado2Rafael Yáñez3Juan Bautista Roldán4Department of Applied Mathematics, University of Granada, 18071 Granada, SpainDepartment of Applied Mathematics, University of Granada, 18071 Granada, SpainDepartment of Electronics and Computer Technology, University of Granada, 18071 Granada, SpainDepartment of Applied Mathematics, University of Granada, 18071 Granada, SpainDepartment of Electronics and Computer Technology, University of Granada, 18071 Granada, SpainAn advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices based on hafnium oxide as their dielectric layer. The experimental curves are highly non-linear, due to the underlying physics controlling the device operation, so that a stable numerical procedure is needed. The results also allow promising expectations in the massive extraction of new parameters that can help in the characterization of the electrical device behavior.https://www.mdpi.com/2227-7390/9/17/2159resistive random access memoriesseries resistancemodelingparameter extractionquasi-interpolation |
| spellingShingle | María José Ibáñez Domingo Barrera David Maldonado Rafael Yáñez Juan Bautista Roldán Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes Mathematics resistive random access memories series resistance modeling parameter extraction quasi-interpolation |
| title | Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes |
| title_full | Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes |
| title_fullStr | Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes |
| title_full_unstemmed | Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes |
| title_short | Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes |
| title_sort | non uniform spline quasi interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes |
| topic | resistive random access memories series resistance modeling parameter extraction quasi-interpolation |
| url | https://www.mdpi.com/2227-7390/9/17/2159 |
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