Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
Abstract In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2885-2 |
| _version_ | 1797766324795998208 |
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| author | Yulin Feng Peng Huang Zheng Zhou Xiangxiang Ding Lifeng Liu Xiaoyan Liu Jinfeng Kang |
| author_facet | Yulin Feng Peng Huang Zheng Zhou Xiangxiang Ding Lifeng Liu Xiaoyan Liu Jinfeng Kang |
| author_sort | Yulin Feng |
| collection | DOAJ |
| description | Abstract In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO2 interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation. |
| first_indexed | 2024-03-12T20:23:39Z |
| format | Article |
| id | doaj.art-9f77935ba312455ebe9e3c6366572c75 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T20:23:39Z |
| publishDate | 2019-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-9f77935ba312455ebe9e3c6366572c752023-08-02T00:43:21ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-03-011411510.1186/s11671-019-2885-2Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer DepositionYulin Feng0Peng Huang1Zheng Zhou2Xiangxiang Ding3Lifeng Liu4Xiaoyan Liu5Jinfeng Kang6Institute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityInstitute of Microelectronics, Peking UniversityAbstract In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO2 interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.http://link.springer.com/article/10.1186/s11671-019-2885-2Negative differential resistanceRutheniumRRAMAtomic layer deposition |
| spellingShingle | Yulin Feng Peng Huang Zheng Zhou Xiangxiang Ding Lifeng Liu Xiaoyan Liu Jinfeng Kang Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition Nanoscale Research Letters Negative differential resistance Ruthenium RRAM Atomic layer deposition |
| title | Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition |
| title_full | Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition |
| title_fullStr | Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition |
| title_full_unstemmed | Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition |
| title_short | Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition |
| title_sort | negative differential resistance effect in ru based rram device fabricated by atomic layer deposition |
| topic | Negative differential resistance Ruthenium RRAM Atomic layer deposition |
| url | http://link.springer.com/article/10.1186/s11671-019-2885-2 |
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