NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions
Gas sensors based on ambipolar carbon nanotube (CNT) field-effect transistors with various amounts of CNTs were fabricated by dielectrophoretic assembly. The nitrogen dioxide (NO2) gas response and recovery properties of the transistors were measured to investigate the effect of CNT amount on gas re...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0197182 |
| _version_ | 1797227644677259264 |
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| author | Masafumi Inaba Kaito Yagi Naoki Asano Haruka Omachi Michihiko Nakano Junya Suehiro |
| author_facet | Masafumi Inaba Kaito Yagi Naoki Asano Haruka Omachi Michihiko Nakano Junya Suehiro |
| author_sort | Masafumi Inaba |
| collection | DOAJ |
| description | Gas sensors based on ambipolar carbon nanotube (CNT) field-effect transistors with various amounts of CNTs were fabricated by dielectrophoretic assembly. The nitrogen dioxide (NO2) gas response and recovery properties of the transistors were measured to investigate the effect of CNT amount on gas response. For the device with a small amount of CNTs, responses from the CNT bulk and CNT/electrode contacts were observed. For devices with a large amount of CNTs, in which a network-like structure of CNTs was observed near the electrodes, an increased current in both electron and hole conduction regions was observed compared with that for the device with a small amount of CNTs. The increased current in the electron conduction region rapidly decreased during recovery. This response is consistent with that of CNT/CNT X-type contacts, which have a high resistance before NO2 adsorption. Equivalent circuits of CNT channels with CNT/CNT contacts were developed, allowing the transistor behavior to be qualitatively discussed. Evaluation of time constants revealed that CNT/electrode contacts and CNT/CNT X-type contacts exhibited high NO2 adsorption and desorption rates, respectively. |
| first_indexed | 2024-04-24T14:44:05Z |
| format | Article |
| id | doaj.art-9f811c2325624422bcd98fbac9d4139d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-24T14:44:05Z |
| publishDate | 2024-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-9f811c2325624422bcd98fbac9d4139d2024-04-02T20:29:17ZengAIP Publishing LLCAIP Advances2158-32262024-03-01143035140035140-610.1063/5.0197182NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctionsMasafumi Inaba0Kaito Yagi1Naoki Asano2Haruka Omachi3Michihiko Nakano4Junya Suehiro5Faculty of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanIntegrated Research Consortium on Chemical Sciences, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, JapanFaculty of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanFaculty of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, JapanGas sensors based on ambipolar carbon nanotube (CNT) field-effect transistors with various amounts of CNTs were fabricated by dielectrophoretic assembly. The nitrogen dioxide (NO2) gas response and recovery properties of the transistors were measured to investigate the effect of CNT amount on gas response. For the device with a small amount of CNTs, responses from the CNT bulk and CNT/electrode contacts were observed. For devices with a large amount of CNTs, in which a network-like structure of CNTs was observed near the electrodes, an increased current in both electron and hole conduction regions was observed compared with that for the device with a small amount of CNTs. The increased current in the electron conduction region rapidly decreased during recovery. This response is consistent with that of CNT/CNT X-type contacts, which have a high resistance before NO2 adsorption. Equivalent circuits of CNT channels with CNT/CNT contacts were developed, allowing the transistor behavior to be qualitatively discussed. Evaluation of time constants revealed that CNT/electrode contacts and CNT/CNT X-type contacts exhibited high NO2 adsorption and desorption rates, respectively.http://dx.doi.org/10.1063/5.0197182 |
| spellingShingle | Masafumi Inaba Kaito Yagi Naoki Asano Haruka Omachi Michihiko Nakano Junya Suehiro NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions AIP Advances |
| title | NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions |
| title_full | NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions |
| title_fullStr | NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions |
| title_full_unstemmed | NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions |
| title_short | NO2 gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions |
| title_sort | no2 gas response and recovery properties of ambipolar cnt fets with various cnt cnt junctions |
| url | http://dx.doi.org/10.1063/5.0197182 |
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