Dependence of quantum dot solar cell parameters on the number of quantum dot layers
We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0145361 |
| _version_ | 1797755896687755264 |
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| author | Tewodros Adaro Gatissa Teshome Senbeta Debela Belayneh Mesfin Ali |
| author_facet | Tewodros Adaro Gatissa Teshome Senbeta Debela Belayneh Mesfin Ali |
| author_sort | Tewodros Adaro Gatissa |
| collection | DOAJ |
| description | We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%. Increasing the number of layers beyond the optimum value resulted in the decrease of efficiency. The presence of InAs QD layers in the cell structure results in a significant rise of the short circuit current density from 33.4 mA/cm2 without InAs QD to 45.4 mA/cm2 in the presence of InAs QD. At the same time, the efficiency of the cell increased from 20.5% without InAs QD to 27.4% with InAs QD. |
| first_indexed | 2024-03-12T17:53:45Z |
| format | Article |
| id | doaj.art-9f87b3f1c9a64ba188d815b4a064b2c2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T17:53:45Z |
| publishDate | 2023-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-9f87b3f1c9a64ba188d815b4a064b2c22023-08-02T20:06:09ZengAIP Publishing LLCAIP Advances2158-32262023-07-01137075215075215-1110.1063/5.0145361Dependence of quantum dot solar cell parameters on the number of quantum dot layersTewodros Adaro Gatissa0Teshome Senbeta Debela1Belayneh Mesfin Ali2Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, EthiopiaDepartment of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, EthiopiaDepartment of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, EthiopiaWe report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%. Increasing the number of layers beyond the optimum value resulted in the decrease of efficiency. The presence of InAs QD layers in the cell structure results in a significant rise of the short circuit current density from 33.4 mA/cm2 without InAs QD to 45.4 mA/cm2 in the presence of InAs QD. At the same time, the efficiency of the cell increased from 20.5% without InAs QD to 27.4% with InAs QD.http://dx.doi.org/10.1063/5.0145361 |
| spellingShingle | Tewodros Adaro Gatissa Teshome Senbeta Debela Belayneh Mesfin Ali Dependence of quantum dot solar cell parameters on the number of quantum dot layers AIP Advances |
| title | Dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| title_full | Dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| title_fullStr | Dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| title_full_unstemmed | Dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| title_short | Dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| title_sort | dependence of quantum dot solar cell parameters on the number of quantum dot layers |
| url | http://dx.doi.org/10.1063/5.0145361 |
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