Failure Estimates for SiC Power MOSFETs in Space Electronics
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space a...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-06-01
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| Series: | Aerospace |
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| Online Access: | http://www.mdpi.com/2226-4310/5/3/67 |
| _version_ | 1818391559555514368 |
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| author | Kenneth F. Galloway Arthur F. Witulski Ronald D. Schrimpf Andrew L. Sternberg Dennis R. Ball Arto Javanainen Robert A. Reed Brian D. Sierawski Jean-Marie Lauenstein |
| author_facet | Kenneth F. Galloway Arthur F. Witulski Ronald D. Schrimpf Andrew L. Sternberg Dennis R. Ball Arto Javanainen Robert A. Reed Brian D. Sierawski Jean-Marie Lauenstein |
| author_sort | Kenneth F. Galloway |
| collection | DOAJ |
| description | Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. |
| first_indexed | 2024-12-14T05:15:27Z |
| format | Article |
| id | doaj.art-9fc7fe16c21a4bddb4f813b56c6aa0b8 |
| institution | Directory Open Access Journal |
| issn | 2226-4310 |
| language | English |
| last_indexed | 2024-12-14T05:15:27Z |
| publishDate | 2018-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Aerospace |
| spelling | doaj.art-9fc7fe16c21a4bddb4f813b56c6aa0b82022-12-21T23:15:51ZengMDPI AGAerospace2226-43102018-06-01536710.3390/aerospace5030067aerospace5030067Failure Estimates for SiC Power MOSFETs in Space ElectronicsKenneth F. Galloway0Arthur F. Witulski1Ronald D. Schrimpf2Andrew L. Sternberg3Dennis R. Ball4Arto Javanainen5Robert A. Reed6Brian D. Sierawski7Jean-Marie Lauenstein8Institute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USADepartment of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USAInstitute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USANASA Goddard Space Flight Center, Code 561.4, Greenbelt, MD 20771, USASilicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.http://www.mdpi.com/2226-4310/5/3/67single event effectsheavy ionssilicon carbidesingle-event burnoutpower devicespower MOSFETsreliabilityfailure rates |
| spellingShingle | Kenneth F. Galloway Arthur F. Witulski Ronald D. Schrimpf Andrew L. Sternberg Dennis R. Ball Arto Javanainen Robert A. Reed Brian D. Sierawski Jean-Marie Lauenstein Failure Estimates for SiC Power MOSFETs in Space Electronics Aerospace single event effects heavy ions silicon carbide single-event burnout power devices power MOSFETs reliability failure rates |
| title | Failure Estimates for SiC Power MOSFETs in Space Electronics |
| title_full | Failure Estimates for SiC Power MOSFETs in Space Electronics |
| title_fullStr | Failure Estimates for SiC Power MOSFETs in Space Electronics |
| title_full_unstemmed | Failure Estimates for SiC Power MOSFETs in Space Electronics |
| title_short | Failure Estimates for SiC Power MOSFETs in Space Electronics |
| title_sort | failure estimates for sic power mosfets in space electronics |
| topic | single event effects heavy ions silicon carbide single-event burnout power devices power MOSFETs reliability failure rates |
| url | http://www.mdpi.com/2226-4310/5/3/67 |
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