Failure Estimates for SiC Power MOSFETs in Space Electronics

Failure Estimates for SiC Power MOSFETs in Space Electronics

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space a...

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Bibliographic Details
Main Authors:	Kenneth F. Galloway, Arthur F. Witulski, Ronald D. Schrimpf, Andrew L. Sternberg, Dennis R. Ball, Arto Javanainen, Robert A. Reed, Brian D. Sierawski, Jean-Marie Lauenstein
Format:	Article
Language:	English
Published:	MDPI AG 2018-06-01
Series:	Aerospace
Subjects:	single event effects heavy ions silicon carbide single-event burnout power devices power MOSFETs reliability failure rates
Online Access:	http://www.mdpi.com/2226-4310/5/3/67

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