On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9348901/ |
| _version_ | 1819260456846491648 |
|---|---|
| author | Jinyuan Li Yunong Liu Yaosheng Li Zhongyuan Chen Chunsheng Guo Hao Li |
| author_facet | Jinyuan Li Yunong Liu Yaosheng Li Zhongyuan Chen Chunsheng Guo Hao Li |
| author_sort | Jinyuan Li |
| collection | DOAJ |
| description | In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device is derived and utilized to establish a temperature calibration curve, with which the online measurement of the insulate-gate bipolar transistor module chip temperature can be implemented directly by real-time monitoring of device leakage current in high-temperature reverse-bias test. The method we proposed solves the problem of large measurement error in chip temperature obtained by traditional thermal resistance calculation method. In addition, real-time chip temperature can be monitored without introducing additional test circuit or HTRB interruption experiment. To demonstrate the effectiveness of the proposed method, the switching small-current temperature measurement method is used to make comparison, and the experiment result indicates that the temperature of the chip in the blocking test can be obtained with high precision by using the leakage current measurement method presented in this work. |
| first_indexed | 2024-12-23T19:26:12Z |
| format | Article |
| id | doaj.art-9fd25ed2721548bd90d8e31603039a96 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-23T19:26:12Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-9fd25ed2721548bd90d8e31603039a962022-12-21T17:34:02ZengIEEEIEEE Access2169-35362021-01-019876978770510.1109/ACCESS.2021.30575389348901On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias TestJinyuan Li0Yunong Liu1https://orcid.org/0000-0002-1479-0109Yaosheng Li2Zhongyuan Chen3Chunsheng Guo4https://orcid.org/0000-0001-8100-0616Hao Li5State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Company Ltd., Beijing, ChinaFaculty of Information Technology, Beijing University of Technology, Beijing, ChinaInstitute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, ChinaInstitute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, ChinaFaculty of Information Technology, Beijing University of Technology, Beijing, ChinaFaculty of Information Technology, Beijing University of Technology, Beijing, ChinaIn high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device is derived and utilized to establish a temperature calibration curve, with which the online measurement of the insulate-gate bipolar transistor module chip temperature can be implemented directly by real-time monitoring of device leakage current in high-temperature reverse-bias test. The method we proposed solves the problem of large measurement error in chip temperature obtained by traditional thermal resistance calculation method. In addition, real-time chip temperature can be monitored without introducing additional test circuit or HTRB interruption experiment. To demonstrate the effectiveness of the proposed method, the switching small-current temperature measurement method is used to make comparison, and the experiment result indicates that the temperature of the chip in the blocking test can be obtained with high precision by using the leakage current measurement method presented in this work.https://ieeexplore.ieee.org/document/9348901/Insulated gate bipolar transistorsleakage currentstemperature measurementtemperature resistance |
| spellingShingle | Jinyuan Li Yunong Liu Yaosheng Li Zhongyuan Chen Chunsheng Guo Hao Li On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test IEEE Access Insulated gate bipolar transistors leakage currents temperature measurement temperature resistance |
| title | On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test |
| title_full | On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test |
| title_fullStr | On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test |
| title_full_unstemmed | On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test |
| title_short | On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test |
| title_sort | on line measurement of chip temperature based on blocking leakage current of the insulated gate bipolar transistor module in the high temperature reverse bias test |
| topic | Insulated gate bipolar transistors leakage currents temperature measurement temperature resistance |
| url | https://ieeexplore.ieee.org/document/9348901/ |
| work_keys_str_mv | AT jinyuanli onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest AT yunongliu onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest AT yaoshengli onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest AT zhongyuanchen onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest AT chunshengguo onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest AT haoli onlinemeasurementofchiptemperaturebasedonblockingleakagecurrentoftheinsulatedgatebipolartransistormoduleinthehightemperaturereversebiastest |