On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9348901/ |