Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution
The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х = 0 - 0.06) in the temperature interval 80 - 40...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2020-03-01
|
| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | https://journals.pnu.edu.ua/index.php/pcss/article/view/2888 |
| _version_ | 1811193115340439552 |
|---|---|
| author | Yu. Stadnyk V. Romaka A. Нoryn L. Romaka V. Krayovskyy I. Romaniv M. Rokomanuk |
| author_facet | Yu. Stadnyk V. Romaka A. Нoryn L. Romaka V. Krayovskyy I. Romaniv M. Rokomanuk |
| author_sort | Yu. Stadnyk |
| collection | DOAJ |
| description | The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х = 0 - 0.06) in the temperature interval 80 - 400 K was studied. It was shown that including of Mo atoms (rМо= 0.140 nm) in the ToCoSb structure by substitution of Ti atoms (rТі= 0.146 нм) in 4a position is accompanied with non-monotonous variation of the lattice parameter values а(х), indicating unpredictable structural changes. Based on analysis of the variation of the electric resistivity values, thermopower coefficient, magnetic susceptibility and energetic characteristics, it was concluded that simultaneous generation in the crystal of the structural defects of the donor and acceptor nature (donor-acceptor pairs), which generate corresponding energy levels in the band gap of semiconductor and determine its electrical conductivity. |
| first_indexed | 2024-04-12T00:03:01Z |
| format | Article |
| id | doaj.art-9fe35932794044ebba73a80662510618 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-12T00:03:01Z |
| publishDate | 2020-03-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-9fe35932794044ebba73a806625106182022-12-22T03:56:11ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892020-03-01211738110.15330/pcss.21.1.73-812888Investigation of Ti1-xMoxCoSb Semiconducting Solid SolutionYu. Stadnyk0V. Romaka1A. Нoryn2L. Romaka3V. Krayovskyy4I. Romaniv5M. Rokomanuk6Ivan Franko National University of LvivNational University “Lvivska Politechnika”Ivan Franko National University of LvivIvan Franko National University of LvivNational University “Lvivska Politechnika”Ivan Franko National University of LvivNational University “Lvivska Politechnika”The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х = 0 - 0.06) in the temperature interval 80 - 400 K was studied. It was shown that including of Mo atoms (rМо= 0.140 nm) in the ToCoSb structure by substitution of Ti atoms (rТі= 0.146 нм) in 4a position is accompanied with non-monotonous variation of the lattice parameter values а(х), indicating unpredictable structural changes. Based on analysis of the variation of the electric resistivity values, thermopower coefficient, magnetic susceptibility and energetic characteristics, it was concluded that simultaneous generation in the crystal of the structural defects of the donor and acceptor nature (donor-acceptor pairs), which generate corresponding energy levels in the band gap of semiconductor and determine its electrical conductivity.https://journals.pnu.edu.ua/index.php/pcss/article/view/2888solid solutionelectrical conductivitythermopower coefficientfermi level |
| spellingShingle | Yu. Stadnyk V. Romaka A. Нoryn L. Romaka V. Krayovskyy I. Romaniv M. Rokomanuk Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution Фізика і хімія твердого тіла solid solution electrical conductivity thermopower coefficient fermi level |
| title | Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution |
| title_full | Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution |
| title_fullStr | Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution |
| title_full_unstemmed | Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution |
| title_short | Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution |
| title_sort | investigation of ti1 xmoxcosb semiconducting solid solution |
| topic | solid solution electrical conductivity thermopower coefficient fermi level |
| url | https://journals.pnu.edu.ua/index.php/pcss/article/view/2888 |
| work_keys_str_mv | AT yustadnyk investigationofti1xmoxcosbsemiconductingsolidsolution AT vromaka investigationofti1xmoxcosbsemiconductingsolidsolution AT anoryn investigationofti1xmoxcosbsemiconductingsolidsolution AT lromaka investigationofti1xmoxcosbsemiconductingsolidsolution AT vkrayovskyy investigationofti1xmoxcosbsemiconductingsolidsolution AT iromaniv investigationofti1xmoxcosbsemiconductingsolidsolution AT mrokomanuk investigationofti1xmoxcosbsemiconductingsolidsolution |