Universal edge bands induced by linearly polarized irradiation on phosphorene

Phosphorene (a monolayer of black phosphorus) is a large gap semiconductor with high mobility and has great application potential. Numerical calculations reveal that phosphorene is a topologically trivial material and can only host edge bands on specified edges such as the zigzag edge. A linearly po...

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Main Authors: Mou Yang, Wen-Lian Zhang, Zhi-Jun Cai, Rui-Qiang Wang, Yan-Kui Bai
Format: Article
Language:English
Published: IOP Publishing 2017-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/aa5016
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author Mou Yang
Wen-Lian Zhang
Zhi-Jun Cai
Rui-Qiang Wang
Yan-Kui Bai
author_facet Mou Yang
Wen-Lian Zhang
Zhi-Jun Cai
Rui-Qiang Wang
Yan-Kui Bai
author_sort Mou Yang
collection DOAJ
description Phosphorene (a monolayer of black phosphorus) is a large gap semiconductor with high mobility and has great application potential. Numerical calculations reveal that phosphorene is a topologically trivial material and can only host edge bands on specified edges such as the zigzag edge. A linearly polarized irradiation on the phosphorene lattice results in the dynamic gaps in the quasi-energy spectrum. We found that the irradiation polarized in the zigzag direction induces new edge bands within the dynamic gaps on any type of edge (zigzag, armchair, or other bearded edge). We proposed a new gauge independent quantity, $\delta +g$ , to account for the appearence of universal edge bands, where δ is the detune and g is the light induced valence-conduction band transition element. The number of edge bands in the dynamic gaps is reflected by the winding number of it.
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spelling doaj.art-9fe6fe7807bd4ce88386766cde413b762023-08-08T14:35:40ZengIOP PublishingNew Journal of Physics1367-26302017-01-0119101300410.1088/1367-2630/aa5016Universal edge bands induced by linearly polarized irradiation on phosphoreneMou Yang0Wen-Lian Zhang1Zhi-Jun Cai2Rui-Qiang Wang3Yan-Kui Bai4Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University , Guangzhou 510006, People's Republic of ChinaGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University , Guangzhou 510006, People's Republic of ChinaGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University , Guangzhou 510006, People's Republic of ChinaGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University , Guangzhou 510006, People's Republic of ChinaCollege of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University , Shijiazhuang, Hebei 050024, People's Republic of ChinaPhosphorene (a monolayer of black phosphorus) is a large gap semiconductor with high mobility and has great application potential. Numerical calculations reveal that phosphorene is a topologically trivial material and can only host edge bands on specified edges such as the zigzag edge. A linearly polarized irradiation on the phosphorene lattice results in the dynamic gaps in the quasi-energy spectrum. We found that the irradiation polarized in the zigzag direction induces new edge bands within the dynamic gaps on any type of edge (zigzag, armchair, or other bearded edge). We proposed a new gauge independent quantity, $\delta +g$ , to account for the appearence of universal edge bands, where δ is the detune and g is the light induced valence-conduction band transition element. The number of edge bands in the dynamic gaps is reflected by the winding number of it.https://doi.org/10.1088/1367-2630/aa5016phosphorenefloguet topological insulatoredge bandwinding number73.22.Pr72.80.Vp
spellingShingle Mou Yang
Wen-Lian Zhang
Zhi-Jun Cai
Rui-Qiang Wang
Yan-Kui Bai
Universal edge bands induced by linearly polarized irradiation on phosphorene
New Journal of Physics
phosphorene
floguet topological insulator
edge band
winding number
73.22.Pr
72.80.Vp
title Universal edge bands induced by linearly polarized irradiation on phosphorene
title_full Universal edge bands induced by linearly polarized irradiation on phosphorene
title_fullStr Universal edge bands induced by linearly polarized irradiation on phosphorene
title_full_unstemmed Universal edge bands induced by linearly polarized irradiation on phosphorene
title_short Universal edge bands induced by linearly polarized irradiation on phosphorene
title_sort universal edge bands induced by linearly polarized irradiation on phosphorene
topic phosphorene
floguet topological insulator
edge band
winding number
73.22.Pr
72.80.Vp
url https://doi.org/10.1088/1367-2630/aa5016
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AT zhijuncai universaledgebandsinducedbylinearlypolarizedirradiationonphosphorene
AT ruiqiangwang universaledgebandsinducedbylinearlypolarizedirradiationonphosphorene
AT yankuibai universaledgebandsinducedbylinearlypolarizedirradiationonphosphorene