Polar iodate BiO(IO3): A two-dimensional ultrawide-bandgap semiconductor with high carrier mobility and robust piezoelectricity

Polar iodate BiO(IO3): A two-dimensional ultrawide-bandgap semiconductor with high carrier mobility and robust piezoelectricity

Ultrawide-bandgap (UWBG) semiconductors, surpassing GaN with a bandgap of 3.4 eV, offer distinct advantages in high-temperature, high-frequency, and radiation-resistant applications. Specifically, two-dimensional (2D) UWBG materials play a crucial role in the miniaturization of practical devices. He...

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Bibliographic Details
Main Authors: Meiyang Yu, Wenjiang Gao, Xiaobo Shi, Qingqing Yuan, Bing Wang, Lin Ju, Huabing Yin
Format: Article
Language:English
Published: Elsevier 2024-04-01
Series:Results in Physics
Subjects:
2D materials
Ultrawide bandgap
Piezoelectricity
High carrier mobility
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724002444

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