Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional elec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/6/830 |
| _version_ | 1797484345270730752 |
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| author | Yi Fang Ling Chen Yuqi Liu Hong Wang |
| author_facet | Yi Fang Ling Chen Yuqi Liu Hong Wang |
| author_sort | Yi Fang |
| collection | DOAJ |
| description | We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional electron gas (2DEG) by optimizing the structural parameters of the back barrier, so that the leakage current of the buffer layer is reduced. Through these optimization methods, a lower drain leakage current and a good radio frequency performance were obtained. The device has a cut-off frequency of 48.9 GHz, a maximum oscillation frequency of 73.20 GHz, and a radio frequency loss of 0.239 dB/mm (at 6 GHz). This work provides a basis for the preparation of radio frequency devices with excellent frequency characteristics and low RF loss. |
| first_indexed | 2024-03-09T23:02:10Z |
| format | Article |
| id | doaj.art-a08ef18257674cfa8fedbc5887e3a757 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T23:02:10Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-a08ef18257674cfa8fedbc5887e3a7572023-11-23T18:00:04ZengMDPI AGMicromachines2072-666X2022-05-0113683010.3390/mi13060830Reduction in RF Loss Based on AlGaN Back-Barrier Structure ChangesYi Fang0Ling Chen1Yuqi Liu2Hong Wang3The Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, ChinaThe Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, ChinaThe Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, ChinaThe Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, ChinaWe designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional electron gas (2DEG) by optimizing the structural parameters of the back barrier, so that the leakage current of the buffer layer is reduced. Through these optimization methods, a lower drain leakage current and a good radio frequency performance were obtained. The device has a cut-off frequency of 48.9 GHz, a maximum oscillation frequency of 73.20 GHz, and a radio frequency loss of 0.239 dB/mm (at 6 GHz). This work provides a basis for the preparation of radio frequency devices with excellent frequency characteristics and low RF loss.https://www.mdpi.com/2072-666X/13/6/830HEMTAlGaNback-barrierRF loss |
| spellingShingle | Yi Fang Ling Chen Yuqi Liu Hong Wang Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes Micromachines HEMT AlGaN back-barrier RF loss |
| title | Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes |
| title_full | Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes |
| title_fullStr | Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes |
| title_full_unstemmed | Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes |
| title_short | Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes |
| title_sort | reduction in rf loss based on algan back barrier structure changes |
| topic | HEMT AlGaN back-barrier RF loss |
| url | https://www.mdpi.com/2072-666X/13/6/830 |
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