Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes

Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes

We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional elec...

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Bibliographic Details
Main Authors:	Yi Fang, Ling Chen, Yuqi Liu, Hong Wang
Format:	Article
Language:	English
Published:	MDPI AG 2022-05-01
Series:	Micromachines
Subjects:	HEMT AlGaN back-barrier RF loss
Online Access:	https://www.mdpi.com/2072-666X/13/6/830

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