Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability
High indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited i...
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MDPI AG
2024-01-01
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| Online Access: | https://www.mdpi.com/2073-4352/14/2/105 |
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| author | Hooman Enayati Siddha Pimputkar |
| author_facet | Hooman Enayati Siddha Pimputkar |
| author_sort | Hooman Enayati |
| collection | DOAJ |
| description | High indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired. |
| first_indexed | 2024-03-07T22:36:43Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-07T22:36:43Z |
| publishDate | 2024-01-01 |
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| spelling | doaj.art-a0a73701d5484c028f57e617b276019f2024-02-23T15:13:05ZengMDPI AGCrystals2073-43522024-01-0114210510.3390/cryst14020105Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow StabilityHooman Enayati0Siddha Pimputkar1Department of Materials Science and Engineering, Center for Photonics and Nanoelectronics, Lehigh University, Bethlehem, PA 18015, USADepartment of Materials Science and Engineering, Center for Photonics and Nanoelectronics, Lehigh University, Bethlehem, PA 18015, USAHigh indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired.https://www.mdpi.com/2073-4352/14/2/105metal-organic chemical vapor depositionnitridessemiconductor materialscomputational fluid dynamicscomputer simulationturbulent modeling |
| spellingShingle | Hooman Enayati Siddha Pimputkar Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability Crystals metal-organic chemical vapor deposition nitrides semiconductor materials computational fluid dynamics computer simulation turbulent modeling |
| title | Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability |
| title_full | Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability |
| title_fullStr | Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability |
| title_full_unstemmed | Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability |
| title_short | Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability |
| title_sort | computational fluid dynamic analysis of a high pressure spatial chemical vapor deposition hps cvd reactor for flow stability |
| topic | metal-organic chemical vapor deposition nitrides semiconductor materials computational fluid dynamics computer simulation turbulent modeling |
| url | https://www.mdpi.com/2073-4352/14/2/105 |
| work_keys_str_mv | AT hoomanenayati computationalfluiddynamicanalysisofahighpressurespatialchemicalvapordepositionhpscvdreactorforflowstability AT siddhapimputkar computationalfluiddynamicanalysisofahighpressurespatialchemicalvapordepositionhpscvdreactorforflowstability |