Modeling and characterization of stochastic resistive switching in single Ag2S nanowires
Abstract Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag2S...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-09893-4 |
| _version_ | 1818012340986052608 |
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| author | Nikolay Frick Mahshid Hosseini Damien Guilbaud Ming Gao Thomas H. LaBean |
| author_facet | Nikolay Frick Mahshid Hosseini Damien Guilbaud Ming Gao Thomas H. LaBean |
| author_sort | Nikolay Frick |
| collection | DOAJ |
| description | Abstract Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag2S nanowires (NWs) and extended the basic RS model to reproduce experimental observations. The work models resistivity of the device as a percolation of the conductive filaments. It also addressed continuous fluctuations of the resistivity with a stochastic change in volume fractions of the filaments in the device. As a result, these fluctuations cause unpredictable patterns in current-voltage characteristics and include a spontaneous change in resistance of the device during the linear sweep that conventional memristor models with constant resistivity cannot represent. The parameters of the presented stochastic model of a single Ag2S NW were fitted to the experimental data and reproduced key features of RS in the physical devices. Moreover, the model suggested a non-core shell structure of the Ag2S NWs. The outcome of this work is aimed to aid in simulating large self-assembled memristive networks and help to extend existing RS models. |
| first_indexed | 2024-04-14T06:20:01Z |
| format | Article |
| id | doaj.art-a0a9cfcf32184f288d46dc40f0fdb7e4 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-14T06:20:01Z |
| publishDate | 2022-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-a0a9cfcf32184f288d46dc40f0fdb7e42022-12-22T02:08:05ZengNature PortfolioScientific Reports2045-23222022-04-0112111010.1038/s41598-022-09893-4Modeling and characterization of stochastic resistive switching in single Ag2S nanowiresNikolay Frick0Mahshid Hosseini1Damien Guilbaud2Ming Gao3Thomas H. LaBean4NC State University, Materials Science and EngineeringNC State University, Materials Science and EngineeringNC State University, Biomedical EngineeringNC State University, Materials Science and EngineeringNC State University, Materials Science and EngineeringAbstract Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag2S nanowires (NWs) and extended the basic RS model to reproduce experimental observations. The work models resistivity of the device as a percolation of the conductive filaments. It also addressed continuous fluctuations of the resistivity with a stochastic change in volume fractions of the filaments in the device. As a result, these fluctuations cause unpredictable patterns in current-voltage characteristics and include a spontaneous change in resistance of the device during the linear sweep that conventional memristor models with constant resistivity cannot represent. The parameters of the presented stochastic model of a single Ag2S NW were fitted to the experimental data and reproduced key features of RS in the physical devices. Moreover, the model suggested a non-core shell structure of the Ag2S NWs. The outcome of this work is aimed to aid in simulating large self-assembled memristive networks and help to extend existing RS models.https://doi.org/10.1038/s41598-022-09893-4 |
| spellingShingle | Nikolay Frick Mahshid Hosseini Damien Guilbaud Ming Gao Thomas H. LaBean Modeling and characterization of stochastic resistive switching in single Ag2S nanowires Scientific Reports |
| title | Modeling and characterization of stochastic resistive switching in single Ag2S nanowires |
| title_full | Modeling and characterization of stochastic resistive switching in single Ag2S nanowires |
| title_fullStr | Modeling and characterization of stochastic resistive switching in single Ag2S nanowires |
| title_full_unstemmed | Modeling and characterization of stochastic resistive switching in single Ag2S nanowires |
| title_short | Modeling and characterization of stochastic resistive switching in single Ag2S nanowires |
| title_sort | modeling and characterization of stochastic resistive switching in single ag2s nanowires |
| url | https://doi.org/10.1038/s41598-022-09893-4 |
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