Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices
Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equa...
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MDPI AG
2023-10-01
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| Online Access: | https://www.mdpi.com/2073-4352/13/10/1506 |
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| author | Fang Zhou Yujing Zhao Feiya Fu Li Liu Zhixin Luo |
| author_facet | Fang Zhou Yujing Zhao Feiya Fu Li Liu Zhixin Luo |
| author_sort | Fang Zhou |
| collection | DOAJ |
| description | Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors. |
| first_indexed | 2024-03-10T21:19:54Z |
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| language | English |
| last_indexed | 2024-03-10T21:19:54Z |
| publishDate | 2023-10-01 |
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| series | Crystals |
| spelling | doaj.art-a0d929f2127e4e6a9347dc98e35b11d32023-11-19T16:10:14ZengMDPI AGCrystals2073-43522023-10-011310150610.3390/cryst13101506Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets DevicesFang Zhou0Yujing Zhao1Feiya Fu2Li Liu3Zhixin Luo4Department of Criminal Science and Technology, Department of Foundation Course, Hunan Police College, Changsha 410138, ChinaSchool of Physics and Electronics, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province and Institute of Interdisciplinary Studies, Hunan Normal University, Changsha 410081, ChinaDepartment Chem & Biochem, California State University Los Angeles, Los Angeles, CA 90032, USASchool of Mathematics, Computer Science and Engineering, University of London, London EC1V 0HB, UKDepartment of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio, TX 78249, USAHere, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors.https://www.mdpi.com/2073-4352/13/10/1506GaS nanosheetchemical vapor depositiontwo-dimensional (2D) nanostructuresphotocurrent |
| spellingShingle | Fang Zhou Yujing Zhao Feiya Fu Li Liu Zhixin Luo Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices Crystals GaS nanosheet chemical vapor deposition two-dimensional (2D) nanostructures photocurrent |
| title | Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices |
| title_full | Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices |
| title_fullStr | Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices |
| title_full_unstemmed | Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices |
| title_short | Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices |
| title_sort | thickness nanoarchitectonics with edge enhanced raman polarization raman optoelectronic properties of gas nanosheets devices |
| topic | GaS nanosheet chemical vapor deposition two-dimensional (2D) nanostructures photocurrent |
| url | https://www.mdpi.com/2073-4352/13/10/1506 |
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