INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
In the present study, the degree of relaxation of tension in the barrier layer of heterostructures AlGaN / GaN on the basis of measurements of the capacitance-voltage characteristics GaNHEMT is determined. Samples were grown on Al2O3 substrates by deposition of organometallic compounds from a gaseou...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2016-10-01
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| Series: | Российский технологический журнал |
| Subjects: | |
| Online Access: | https://www.rtj-mirea.ru/jour/article/view/35 |
| _version_ | 1797999692585369600 |
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| author | O. A. Ruban P. P. Maltsev |
| author_facet | O. A. Ruban P. P. Maltsev |
| author_sort | O. A. Ruban |
| collection | DOAJ |
| description | In the present study, the degree of relaxation of tension in the barrier layer of heterostructures AlGaN / GaN on the basis of measurements of the capacitance-voltage characteristics GaNHEMT is determined. Samples were grown on Al2O3 substrates by deposition of organometallic compounds from a gaseous phase. In order to conduct capacitance-voltage measurements, dualgate HEMT were created for all these tested HEMT-structures. From the measured capacitance voltage haracteristics, the Pexp polarization value within each HEMT-structure was obtained. By analyzing the capacitance-voltage characteristics, electron traps were found. According to the modified model by Ambacher, spontaneous Psp values and piezoelectric polarization Ppz were alculated. Obtained values Pexp, Psp and Ppz for each HEMT-structure allowed to determine the value of the relaxation degree of tension R in the barrier layer. Thus, the possibility of application of the capacity-voltage characteristics for evaluating the quality of the crystal structure of the barrier layer in the heterostructure AlGaN / GaN is shown. |
| first_indexed | 2024-04-11T11:08:45Z |
| format | Article |
| id | doaj.art-a0d92d247df84afea727cc9620fb4825 |
| institution | Directory Open Access Journal |
| issn | 2500-316X |
| language | Russian |
| last_indexed | 2024-04-11T11:08:45Z |
| publishDate | 2016-10-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Российский технологический журнал |
| spelling | doaj.art-a0d92d247df84afea727cc9620fb48252022-12-22T04:28:04ZrusMIREA - Russian Technological UniversityРоссийский технологический журнал2500-316X2016-10-0145172310.32362/2500-316X-2016-4-5-17-2335INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICSO. A. Ruban0P. P. Maltsev1Moscow Technological University (MIREA)Moscow Technological University (MIREA)In the present study, the degree of relaxation of tension in the barrier layer of heterostructures AlGaN / GaN on the basis of measurements of the capacitance-voltage characteristics GaNHEMT is determined. Samples were grown on Al2O3 substrates by deposition of organometallic compounds from a gaseous phase. In order to conduct capacitance-voltage measurements, dualgate HEMT were created for all these tested HEMT-structures. From the measured capacitance voltage haracteristics, the Pexp polarization value within each HEMT-structure was obtained. By analyzing the capacitance-voltage characteristics, electron traps were found. According to the modified model by Ambacher, spontaneous Psp values and piezoelectric polarization Ppz were alculated. Obtained values Pexp, Psp and Ppz for each HEMT-structure allowed to determine the value of the relaxation degree of tension R in the barrier layer. Thus, the possibility of application of the capacity-voltage characteristics for evaluating the quality of the crystal structure of the barrier layer in the heterostructure AlGaN / GaN is shown.https://www.rtj-mirea.ru/jour/article/view/35nanostructuresgallium nitridecapacitance-voltage characteristicspiezoelectric effect |
| spellingShingle | O. A. Ruban P. P. Maltsev INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS Российский технологический журнал nanostructures gallium nitride capacitance-voltage characteristics piezoelectric effect |
| title | INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS |
| title_full | INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS |
| title_fullStr | INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS |
| title_full_unstemmed | INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS |
| title_short | INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS |
| title_sort | investigation of polarization in heterostructures with the quantum well algan gan using capacitance voltage characteristics |
| topic | nanostructures gallium nitride capacitance-voltage characteristics piezoelectric effect |
| url | https://www.rtj-mirea.ru/jour/article/view/35 |
| work_keys_str_mv | AT oaruban investigationofpolarizationinheterostructureswiththequantumwellalganganusingcapacitancevoltagecharacteristics AT ppmaltsev investigationofpolarizationinheterostructureswiththequantumwellalganganusingcapacitancevoltagecharacteristics |