INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
In the present study, the degree of relaxation of tension in the barrier layer of heterostructures AlGaN / GaN on the basis of measurements of the capacitance-voltage characteristics GaNHEMT is determined. Samples were grown on Al2O3 substrates by deposition of organometallic compounds from a gaseou...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2016-10-01
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| Series: | Российский технологический журнал |
| Subjects: | |
| Online Access: | https://www.rtj-mirea.ru/jour/article/view/35 |