Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method
This paper explores the conditions for the electrodeposition of Mo<sub>ad</sub> (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe<sub>2</sub> are also presented, performing the deposition of Se<sub>ad</su...
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MDPI AG
2019-01-01
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| Series: | Metals |
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| Online Access: | https://www.mdpi.com/2075-4701/9/2/122 |
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| author | Martina Vizza Andrea Giaccherini Walter Giurlani Maurizio Passaponti Nicola Cioffi Rosaria Anna Picca Antonio De Luca Lorenzo Fabbri Alessandro Lavacchi Filippo Gambinossi Emanuele Piciollo Emanuele Salvietti Massimo Innocenti |
| author_facet | Martina Vizza Andrea Giaccherini Walter Giurlani Maurizio Passaponti Nicola Cioffi Rosaria Anna Picca Antonio De Luca Lorenzo Fabbri Alessandro Lavacchi Filippo Gambinossi Emanuele Piciollo Emanuele Salvietti Massimo Innocenti |
| author_sort | Martina Vizza |
| collection | DOAJ |
| description | This paper explores the conditions for the electrodeposition of Mo<sub>ad</sub> (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe<sub>2</sub> are also presented, performing the deposition of Se<sub>ad</sub> on the deposited Mo<sub>ad</sub>. The deposition of Mo<sub>ad</sub> on Se<sub>ad</sub>/Ag(111) was also explored. MoSe<sub>2</sub> is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials. |
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| issn | 2075-4701 |
| language | English |
| last_indexed | 2024-12-11T09:49:22Z |
| publishDate | 2019-01-01 |
| publisher | MDPI AG |
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| series | Metals |
| spelling | doaj.art-a0febe0c501b49e5b3ec54948df10dc52022-12-22T01:12:27ZengMDPI AGMetals2075-47012019-01-019212210.3390/met9020122met9020122Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD MethodMartina Vizza0Andrea Giaccherini1Walter Giurlani2Maurizio Passaponti3Nicola Cioffi4Rosaria Anna Picca5Antonio De Luca6Lorenzo Fabbri7Alessandro Lavacchi8Filippo Gambinossi9Emanuele Piciollo10Emanuele Salvietti11Massimo Innocenti12Chemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyEarth Sciences Department, University of Florence, Via La Pira 4, I-50121 Firenze, ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyChemistry Department, University of Bari Aldo Moro, Via E. Orabona 4, I-70125 Bari, ItalyChemistry Department, University of Bari Aldo Moro, Via E. Orabona 4, I-70125 Bari, ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyCNR-ICCOM, Via Madonna del Piano 10, I-50019 Sesto Fiorentino (FI), ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyLEM srl, Via Valiani 55, I-52021 Levane (AR), ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyChemistry Department, University of Florence, Via Lastruccia 3-13, I-50019 Sesto Fiorentino (FI), ItalyThis paper explores the conditions for the electrodeposition of Mo<sub>ad</sub> (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe<sub>2</sub> are also presented, performing the deposition of Se<sub>ad</sub> on the deposited Mo<sub>ad</sub>. The deposition of Mo<sub>ad</sub> on Se<sub>ad</sub>/Ag(111) was also explored. MoSe<sub>2</sub> is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.https://www.mdpi.com/2075-4701/9/2/122E-ALDMoSe<sub>2</sub>2D materialsnanoelectronics |
| spellingShingle | Martina Vizza Andrea Giaccherini Walter Giurlani Maurizio Passaponti Nicola Cioffi Rosaria Anna Picca Antonio De Luca Lorenzo Fabbri Alessandro Lavacchi Filippo Gambinossi Emanuele Piciollo Emanuele Salvietti Massimo Innocenti Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method Metals E-ALD MoSe<sub>2</sub> 2D materials nanoelectronics |
| title | Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method |
| title_full | Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method |
| title_fullStr | Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method |
| title_full_unstemmed | Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method |
| title_short | Successes and Issues in the Growth of Mo<sub>ad</sub> and MoSe<sub>2</sub> on Ag(111) by the E-ALD Method |
| title_sort | successes and issues in the growth of mo sub ad sub and mose sub 2 sub on ag 111 by the e ald method |
| topic | E-ALD MoSe<sub>2</sub> 2D materials nanoelectronics |
| url | https://www.mdpi.com/2075-4701/9/2/122 |
| work_keys_str_mv | AT martinavizza successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT andreagiaccherini successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT waltergiurlani successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT mauriziopassaponti successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT nicolacioffi successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT rosariaannapicca successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT antoniodeluca successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT lorenzofabbri successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT alessandrolavacchi successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT filippogambinossi successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT emanuelepiciollo successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT emanuelesalvietti successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod AT massimoinnocenti successesandissuesinthegrowthofmosubadsubandmosesub2subonag111bytheealdmethod |