Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass
We present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-05-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/20/11/3024 |
| _version_ | 1797566963342376960 |
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| author | Joon Hyub Kim Ji-Hoon Han Chan Won Park Nam Ki Min |
| author_facet | Joon Hyub Kim Ji-Hoon Han Chan Won Park Nam Ki Min |
| author_sort | Joon Hyub Kim |
| collection | DOAJ |
| description | We present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate that has a high breakdown voltage. A half-bridge silicon strain gauge is designed, fabricated, and then tested to measure its output characteristics. The device has a glass layer that is only 25–55 µm thick; it shows it is able to withstand a voltage of over 2000 V while maintaining a high degree of linearity with correlation coefficients higher than 0.9990 and an average sensitivity of 104.13. Due to their unique electrical properties, silicon strain gauges-on-glass chips hold much promise for use in advanced force and pressure sensors. |
| first_indexed | 2024-03-10T19:34:55Z |
| format | Article |
| id | doaj.art-a10c88312caa4fd5886a24b0cf65c00c |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T19:34:55Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-a10c88312caa4fd5886a24b0cf65c00c2023-11-20T01:50:09ZengMDPI AGSensors1424-82202020-05-012011302410.3390/s20113024Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free GlassJoon Hyub Kim0Ji-Hoon Han1Chan Won Park2Nam Ki Min3Department of Nanomechatronics Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, KoreaDepartment of Control and Instrumentation Engineering, Korea University, Sejong-ro, Jochiwon-eup, Sejong-si 30019, KoreaDepartment of Electrical and Electronics Engineering, Kangwon National University, Gangwondaehak-gil, Chuncheon-si 24341, KoreaDepartment of Control and Instrumentation Engineering, Korea University, Sejong-ro, Jochiwon-eup, Sejong-si 30019, KoreaWe present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate that has a high breakdown voltage. A half-bridge silicon strain gauge is designed, fabricated, and then tested to measure its output characteristics. The device has a glass layer that is only 25–55 µm thick; it shows it is able to withstand a voltage of over 2000 V while maintaining a high degree of linearity with correlation coefficients higher than 0.9990 and an average sensitivity of 104.13. Due to their unique electrical properties, silicon strain gauges-on-glass chips hold much promise for use in advanced force and pressure sensors.https://www.mdpi.com/1424-8220/20/11/3024strain gaugesiliconalkali-free glasshigh withstand voltagemicro-electromechanical system (MEMS)piezoresistive sensor |
| spellingShingle | Joon Hyub Kim Ji-Hoon Han Chan Won Park Nam Ki Min Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass Sensors strain gauge silicon alkali-free glass high withstand voltage micro-electromechanical system (MEMS) piezoresistive sensor |
| title | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass |
| title_full | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass |
| title_fullStr | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass |
| title_full_unstemmed | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass |
| title_short | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass |
| title_sort | enhancement of withstand voltage in silicon strain gauges using a thin alkali free glass |
| topic | strain gauge silicon alkali-free glass high withstand voltage micro-electromechanical system (MEMS) piezoresistive sensor |
| url | https://www.mdpi.com/1424-8220/20/11/3024 |
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