The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters
The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of P...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/1120 |
| _version_ | 1797881029101355008 |
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| author | V. A. Saladukha V. A. Pilipenko V. A. Gorushko V. A. Philipenya |
| author_facet | V. A. Saladukha V. A. Pilipenko V. A. Gorushko V. A. Philipenya |
| author_sort | V. A. Saladukha |
| collection | DOAJ |
| description | The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of PtSi–Si, and also obtaining as a result of treatment a less defective and equilibrium structure of the barrier layer, to raise barrier height from 0,804 to 0,825 V, to reduce leakage current from –4,42·10-6 to –2,85·10-6 A and in 1,25 times and to raise the reliability of Schottky diodes at operating temperature 125 °C. |
| first_indexed | 2024-04-10T03:12:33Z |
| format | Article |
| id | doaj.art-a111f7f504e24eec8cdedaa243c9d2c7 |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:12:33Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-a111f7f504e24eec8cdedaa243c9d2c72023-03-13T07:33:19ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010162671119The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parametersV. A. Saladukha0V. A. Pilipenko1V. A. Gorushko2V. A. Philipenya3JSC «INTEGRAL» – holding managing company «INTEGRAL»JSC «INTEGRAL» – holding managing company «INTEGRAL»JSC «INTEGRAL» – holding managing company «INTEGRAL»JSC «INTEGRAL» – holding managing company «INTEGRAL»The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of PtSi–Si, and also obtaining as a result of treatment a less defective and equilibrium structure of the barrier layer, to raise barrier height from 0,804 to 0,825 V, to reduce leakage current from –4,42·10-6 to –2,85·10-6 A and in 1,25 times and to raise the reliability of Schottky diodes at operating temperature 125 °C.https://doklady.bsuir.by/jour/article/view/1120schottky diodequick heat treatmentplatinum silicidebarrier heightleakage current |
| spellingShingle | V. A. Saladukha V. A. Pilipenko V. A. Gorushko V. A. Philipenya The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki schottky diode quick heat treatment platinum silicide barrier height leakage current |
| title | The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters |
| title_full | The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters |
| title_fullStr | The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters |
| title_full_unstemmed | The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters |
| title_short | The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters |
| title_sort | impact of formation modes of platinum silicide by the quick heat treatment on schottky diodes parameters |
| topic | schottky diode quick heat treatment platinum silicide barrier height leakage current |
| url | https://doklady.bsuir.by/jour/article/view/1120 |
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