Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix
Compositional control in III–V ternary nanowires grown by the vapor–liquid–solid method is essential for bandgap engineering and the design of functional nanowire nano-heterostructures. Herein, we present rather general theoretical considerations and derive explicit forms of the stationary vapor–sol...
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MDPI AG
2023-09-01
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Online Access: | https://www.mdpi.com/2079-4991/13/18/2532 |
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author | Vladimir G. Dubrovskii |
author_facet | Vladimir G. Dubrovskii |
author_sort | Vladimir G. Dubrovskii |
collection | DOAJ |
description | Compositional control in III–V ternary nanowires grown by the vapor–liquid–solid method is essential for bandgap engineering and the design of functional nanowire nano-heterostructures. Herein, we present rather general theoretical considerations and derive explicit forms of the stationary vapor–solid and liquid–solid distributions of vapor–liquid–solid III–V ternary nanowires based on group-III intermix. It is shown that the vapor–solid distribution of such nanowires is kinetically controlled, while the liquid–solid distribution is in equilibrium or nucleation-limited. For a more technologically important vapor-solid distribution connecting nanowire composition with vapor composition, the kinetic suppression of miscibility gaps at a growth temperature is possible, while miscibility gaps (and generally strong non-linearity of the compositional curves) always remain in the equilibrium liquid–solid distribution. We analyze the available experimental data on the compositions of the vapor–liquid–solid Al<sub>x</sub>Ga<sub>1−x</sub>As, In<sub>x</sub>Ga<sub>1−x</sub>As, In<sub>x</sub>Ga<sub>1−x</sub>P, and In<sub>x</sub>Ga<sub>1−x</sub>N nanowires, which are very well described within the model. Overall, the developed approach circumvents uncertainty in choosing the relevant compositional model (close-to-equilibrium or kinetic), eliminates unknown parameters in the vapor–solid distribution of vapor–liquid–solid nanowires based on group-III intermix, and should be useful for the precise compositional tuning of such nanowires. |
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issn | 2079-4991 |
language | English |
last_indexed | 2024-03-10T22:22:26Z |
publishDate | 2023-09-01 |
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spelling | doaj.art-a15e72f78fb44c8bba511723ea2efedc2023-11-19T12:14:18ZengMDPI AGNanomaterials2079-49912023-09-011318253210.3390/nano13182532Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III IntermixVladimir G. Dubrovskii0Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg 199034, RussiaCompositional control in III–V ternary nanowires grown by the vapor–liquid–solid method is essential for bandgap engineering and the design of functional nanowire nano-heterostructures. Herein, we present rather general theoretical considerations and derive explicit forms of the stationary vapor–solid and liquid–solid distributions of vapor–liquid–solid III–V ternary nanowires based on group-III intermix. It is shown that the vapor–solid distribution of such nanowires is kinetically controlled, while the liquid–solid distribution is in equilibrium or nucleation-limited. For a more technologically important vapor-solid distribution connecting nanowire composition with vapor composition, the kinetic suppression of miscibility gaps at a growth temperature is possible, while miscibility gaps (and generally strong non-linearity of the compositional curves) always remain in the equilibrium liquid–solid distribution. We analyze the available experimental data on the compositions of the vapor–liquid–solid Al<sub>x</sub>Ga<sub>1−x</sub>As, In<sub>x</sub>Ga<sub>1−x</sub>As, In<sub>x</sub>Ga<sub>1−x</sub>P, and In<sub>x</sub>Ga<sub>1−x</sub>N nanowires, which are very well described within the model. Overall, the developed approach circumvents uncertainty in choosing the relevant compositional model (close-to-equilibrium or kinetic), eliminates unknown parameters in the vapor–solid distribution of vapor–liquid–solid nanowires based on group-III intermix, and should be useful for the precise compositional tuning of such nanowires.https://www.mdpi.com/2079-4991/13/18/2532III–V nanowiresvapor–liquid–solid growthgroup-III intermixvapor–solid distributioncompositional control |
spellingShingle | Vladimir G. Dubrovskii Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix Nanomaterials III–V nanowires vapor–liquid–solid growth group-III intermix vapor–solid distribution compositional control |
title | Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix |
title_full | Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix |
title_fullStr | Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix |
title_full_unstemmed | Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix |
title_short | Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix |
title_sort | composition of vapor liquid solid iii v ternary nanowires based on group iii intermix |
topic | III–V nanowires vapor–liquid–solid growth group-III intermix vapor–solid distribution compositional control |
url | https://www.mdpi.com/2079-4991/13/18/2532 |
work_keys_str_mv | AT vladimirgdubrovskii compositionofvaporliquidsolidiiivternarynanowiresbasedongroupiiiintermix |